Pitch reduction lithography by pressure-assisted selective wetting and thermal reflow
[Display omitted] ► We present a new pitch reduction lithographic technique by selective wetting. ► A meniscus was exploited to reduce the feature size of original line pattern. ► The line width was controllable by concentration and ashing time. ► The pattern shape was reconfigurable under different...
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| Veröffentlicht in: | Journal of colloid and interface science 2012-06, Vol.376 (1), p.250-254 |
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| container_title | Journal of colloid and interface science |
| container_volume | 376 |
| creator | Um, Hyung Sik Chae, Jae Joon Lee, Sung Hoon Rahmawan, Yudi Suh, Kahp Y. |
| description | [Display omitted]
► We present a new pitch reduction lithographic technique by selective wetting. ► A meniscus was exploited to reduce the feature size of original line pattern. ► The line width was controllable by concentration and ashing time. ► The pattern shape was reconfigurable under different reflow conditions.
We report on a new pitch reduction lithographic technique by utilizing pressure-assisted selective wetting and thermal reflow. The primary line-and-space pattern of low molecular weight polystyrene (PS) (Mw=17,300) was formed by solvent-assisted capillary force lithography (CFL), on which a diluted photoresist (PR) solution was selectively filled into the spaces by the application of a slight pressure (200gcm−2). Subsequent removal of the PS pattern by toluene and ashing process led to a line pattern with approximately 50% pitch reduction. It was observed that the size reduction and space to width ratios were controllable by changing PR concentration and ashing time. |
| doi_str_mv | 10.1016/j.jcis.2012.02.044 |
| format | Article |
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► We present a new pitch reduction lithographic technique by selective wetting. ► A meniscus was exploited to reduce the feature size of original line pattern. ► The line width was controllable by concentration and ashing time. ► The pattern shape was reconfigurable under different reflow conditions.
We report on a new pitch reduction lithographic technique by utilizing pressure-assisted selective wetting and thermal reflow. The primary line-and-space pattern of low molecular weight polystyrene (PS) (Mw=17,300) was formed by solvent-assisted capillary force lithography (CFL), on which a diluted photoresist (PR) solution was selectively filled into the spaces by the application of a slight pressure (200gcm−2). Subsequent removal of the PS pattern by toluene and ashing process led to a line pattern with approximately 50% pitch reduction. It was observed that the size reduction and space to width ratios were controllable by changing PR concentration and ashing time.</description><identifier>ISSN: 0021-9797</identifier><identifier>EISSN: 1095-7103</identifier><identifier>DOI: 10.1016/j.jcis.2012.02.044</identifier><identifier>PMID: 22465734</identifier><identifier>CODEN: JCISA5</identifier><language>eng</language><publisher>Amsterdam: Elsevier Inc</publisher><subject>Capillary force lithography ; Capillary pressure ; Chemistry ; Dimethylpolysiloxanes - chemistry ; Exact sciences and technology ; General and physical chemistry ; Lithography ; Microtechnology - methods ; Oxidation-Reduction ; Patterning ; Photoresists ; Pitch reduction ; Polystyrene resins ; Polystyrenes - chemistry ; Pressure ; Reduction ; Reflow ; Solid-liquid interface ; Stability ; Surface physical chemistry ; Temperature ; Toluene ; Wettability ; Wetting</subject><ispartof>Journal of colloid and interface science, 2012-06, Vol.376 (1), p.250-254</ispartof><rights>2012 Elsevier Inc.</rights><rights>2015 INIST-CNRS</rights><rights>Copyright © 2012 Elsevier Inc. All rights reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c485t-4697fc523fa1398d9b85e42c564f01f9839d80c170948dda307d022a4f37e60a3</citedby><cites>FETCH-LOGICAL-c485t-4697fc523fa1398d9b85e42c564f01f9839d80c170948dda307d022a4f37e60a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcis.2012.02.044$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,778,782,3539,27907,27908,45978</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25888781$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22465734$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Um, Hyung Sik</creatorcontrib><creatorcontrib>Chae, Jae Joon</creatorcontrib><creatorcontrib>Lee, Sung Hoon</creatorcontrib><creatorcontrib>Rahmawan, Yudi</creatorcontrib><creatorcontrib>Suh, Kahp Y.</creatorcontrib><title>Pitch reduction lithography by pressure-assisted selective wetting and thermal reflow</title><title>Journal of colloid and interface science</title><addtitle>J Colloid Interface Sci</addtitle><description>[Display omitted]
► We present a new pitch reduction lithographic technique by selective wetting. ► A meniscus was exploited to reduce the feature size of original line pattern. ► The line width was controllable by concentration and ashing time. ► The pattern shape was reconfigurable under different reflow conditions.
We report on a new pitch reduction lithographic technique by utilizing pressure-assisted selective wetting and thermal reflow. The primary line-and-space pattern of low molecular weight polystyrene (PS) (Mw=17,300) was formed by solvent-assisted capillary force lithography (CFL), on which a diluted photoresist (PR) solution was selectively filled into the spaces by the application of a slight pressure (200gcm−2). Subsequent removal of the PS pattern by toluene and ashing process led to a line pattern with approximately 50% pitch reduction. It was observed that the size reduction and space to width ratios were controllable by changing PR concentration and ashing time.</description><subject>Capillary force lithography</subject><subject>Capillary pressure</subject><subject>Chemistry</subject><subject>Dimethylpolysiloxanes - chemistry</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Lithography</subject><subject>Microtechnology - methods</subject><subject>Oxidation-Reduction</subject><subject>Patterning</subject><subject>Photoresists</subject><subject>Pitch reduction</subject><subject>Polystyrene resins</subject><subject>Polystyrenes - chemistry</subject><subject>Pressure</subject><subject>Reduction</subject><subject>Reflow</subject><subject>Solid-liquid interface</subject><subject>Stability</subject><subject>Surface physical chemistry</subject><subject>Temperature</subject><subject>Toluene</subject><subject>Wettability</subject><subject>Wetting</subject><issn>0021-9797</issn><issn>1095-7103</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNqNkE2LFDEQhoMo7rj6BzxIXwQvPVa-Ogl4kWV1hQU9uOeQSap3MvR0j0l6l_n3pplxj7JQUJfnfal6CHlPYU2Bdp93652Pec2AsjXUEeIFWVEwslUU-EuyAmC0NcqoC_Im5x0ApVKa1-SCMdFJxcWK3P2KxW-bhGH2JU5jM8Syne6TO2yPzebYHBLmPCdsXc4xFwxNxgEr-oDNI5YSx_vGjaEpW0x7N9Sifpge35JXvRsyvjvvS3L37fr31U17-_P7j6uvt60XWpZWdEb1XjLeO8qNDmajJQrmZSd6oL3R3AQNniowQofgOKgAjDnRc4UdOH5JPp16D2n6M2Mudh-zx2FwI05ztrTSWhsu6TNQYMpwrqCi7IT6NOVcP7KHFPcuHStkF_N2ZxfzdjFvoY4QNfTh3D9v9hieIv9UV-DjGXDZu6FPblw6njiptVZ6OfTLicMq7iFistlHHD2GmKp4G6b4vzv-Ao1woVQ</recordid><startdate>20120615</startdate><enddate>20120615</enddate><creator>Um, Hyung Sik</creator><creator>Chae, Jae Joon</creator><creator>Lee, Sung Hoon</creator><creator>Rahmawan, Yudi</creator><creator>Suh, Kahp Y.</creator><general>Elsevier Inc</general><general>Elsevier</general><scope>IQODW</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20120615</creationdate><title>Pitch reduction lithography by pressure-assisted selective wetting and thermal reflow</title><author>Um, Hyung Sik ; Chae, Jae Joon ; Lee, Sung Hoon ; Rahmawan, Yudi ; Suh, Kahp Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c485t-4697fc523fa1398d9b85e42c564f01f9839d80c170948dda307d022a4f37e60a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Capillary force lithography</topic><topic>Capillary pressure</topic><topic>Chemistry</topic><topic>Dimethylpolysiloxanes - chemistry</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Lithography</topic><topic>Microtechnology - methods</topic><topic>Oxidation-Reduction</topic><topic>Patterning</topic><topic>Photoresists</topic><topic>Pitch reduction</topic><topic>Polystyrene resins</topic><topic>Polystyrenes - chemistry</topic><topic>Pressure</topic><topic>Reduction</topic><topic>Reflow</topic><topic>Solid-liquid interface</topic><topic>Stability</topic><topic>Surface physical chemistry</topic><topic>Temperature</topic><topic>Toluene</topic><topic>Wettability</topic><topic>Wetting</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Um, Hyung Sik</creatorcontrib><creatorcontrib>Chae, Jae Joon</creatorcontrib><creatorcontrib>Lee, Sung Hoon</creatorcontrib><creatorcontrib>Rahmawan, Yudi</creatorcontrib><creatorcontrib>Suh, Kahp Y.</creatorcontrib><collection>Pascal-Francis</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of colloid and interface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Um, Hyung Sik</au><au>Chae, Jae Joon</au><au>Lee, Sung Hoon</au><au>Rahmawan, Yudi</au><au>Suh, Kahp Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pitch reduction lithography by pressure-assisted selective wetting and thermal reflow</atitle><jtitle>Journal of colloid and interface science</jtitle><addtitle>J Colloid Interface Sci</addtitle><date>2012-06-15</date><risdate>2012</risdate><volume>376</volume><issue>1</issue><spage>250</spage><epage>254</epage><pages>250-254</pages><issn>0021-9797</issn><eissn>1095-7103</eissn><coden>JCISA5</coden><abstract>[Display omitted]
► We present a new pitch reduction lithographic technique by selective wetting. ► A meniscus was exploited to reduce the feature size of original line pattern. ► The line width was controllable by concentration and ashing time. ► The pattern shape was reconfigurable under different reflow conditions.
We report on a new pitch reduction lithographic technique by utilizing pressure-assisted selective wetting and thermal reflow. The primary line-and-space pattern of low molecular weight polystyrene (PS) (Mw=17,300) was formed by solvent-assisted capillary force lithography (CFL), on which a diluted photoresist (PR) solution was selectively filled into the spaces by the application of a slight pressure (200gcm−2). Subsequent removal of the PS pattern by toluene and ashing process led to a line pattern with approximately 50% pitch reduction. It was observed that the size reduction and space to width ratios were controllable by changing PR concentration and ashing time.</abstract><cop>Amsterdam</cop><pub>Elsevier Inc</pub><pmid>22465734</pmid><doi>10.1016/j.jcis.2012.02.044</doi><tpages>5</tpages></addata></record> |
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| subjects | Capillary force lithography Capillary pressure Chemistry Dimethylpolysiloxanes - chemistry Exact sciences and technology General and physical chemistry Lithography Microtechnology - methods Oxidation-Reduction Patterning Photoresists Pitch reduction Polystyrene resins Polystyrenes - chemistry Pressure Reduction Reflow Solid-liquid interface Stability Surface physical chemistry Temperature Toluene Wettability Wetting |
| title | Pitch reduction lithography by pressure-assisted selective wetting and thermal reflow |
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