Bottom up deposition of advanced iPVD Cu process integrated with iPVD Ti and CVD Ru

We describe a novel development of bottom up deposition in the advanced Ionized Physical Vapor Deposition (iPVD) Cu process integrated with iPVD Ti and Chemical Vapor Deposition (CVD) Ru. Combination of CVD Ru and iPVD Cu processes provided us void free Cu filling with enlarging Cu grain size. CVD R...

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Veröffentlicht in:	Microelectronic engineering 2012-04, Vol.92, p.76-78
Hauptverfasser:	Ishizaka, Tadahiro, Sakuma, Takashi, Kawamata, Masaya, Yokoyama, Osamu, Kato, Takara, Gomi, Atsushi, Yasumuro, Chiaki, Toshima, Hiroyuki, Fukushima, Toshihiko, Mizusawa, Yasushi, Hatano, Tatsuo, Hara, Masamichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CHEMICAL VAPOR DEPOSITION Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Copper Cross-disciplinary physics: materials science rheology DEPOSITION Dry fill ELECTRICAL CONDUCTIVITY Electronics Exact sciences and technology Grain size GRAIN SIZE AND SHAPE ION BOMBARDMENT iPVD Materials science Metallization Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Risk Ruthenium Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Titanium Trenches VAPOR DEPOSITION Vapor phase epitaxy growth from vapor phase Wettability WETTING
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