Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4

Silicon carbide (SiC) thin films were deposited by low-pressure hot wire chemical vapor deposition (HWCVD) technique using SiH4 and CH4 gas precursors with no hydrogen dilution. Spectroscopic and structural properties of the films deposited at various methane flow rate (10–100 sccm) and low silane f...

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Veröffentlicht in:	Vacuum 2012-02, Vol.86 (8), p.1150-1154
Hauptverfasser:	Shariatmadar Tehrani, F., Badaruddin, M.R., Rahbari, R.G., Muhamad, M.R., Rahman, S.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Chemical vapor deposition Crystallites Deposition Flow rate Low pressure HWCVD Low temperature synthesis Methane Multiphase SiC Phases Silicon carbide
Online-Zugang:	Volltext
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