Depth profiling analysis of barrier-type anodic aluminium oxide films formed on substrates of controlled roughness

The depth resolutions achieved by time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) and glow discharge optical emission spectroscopy (GD‐OES) are comparable for the analysis of relatively flat specimens. However, the precision of sputtering‐induced depth profiling techniques has been shown t...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Surface and interface analysis 2011-01, Vol.43 (1-2), p.183-186
Hauptverfasser:	Trigoulet, N., Tuccitto, N., Delfanti, I., Licciardello, A., Molchan, I. S., Skeldon, P., Thompson, G. E., Tempez, A., Chapon, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminium Aluminum Anodic anodic oxide Atomic, molecular, and ion beam impact and interactions with surfaces Chemical composition analysis, chemical depth and dopant profiling Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Depth profiling depth resolution Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology GD-OES Impact phenomena (including electron spectra and sputtering) Materials science Materials testing Oxide coatings Physics Roughness Surface layer Texture TOF-SIMS
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!