Frequency and voltage dependency of interface states and series resistance in Al/SiO2/p-Si MOS structure

The capacitance-voltage (C-V) and conductance-voltage (G/ omega -V) characteristics of Al/SiO2/p-Si metal-oxide-semiconductor (MOS) Schottky diodes have been measured in the voltage range from -3 to +3 V and frequency range from 5 KHz to 1 MHz at room temperature. It is found that both C and G/ omeg...

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Veröffentlicht in:	Materials science in semiconductor processing 2010-12, Vol.13 (5-6), p.395-399
Hauptverfasser:	Xiao, Hong, Huang, Shihua
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Applied sciences Capacitance Compound structure devices Condensed matter: electronic structure, electrical, magnetic, and optical properties Depletion Diodes Electric potential Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronics Exact sciences and technology Low frequencies Metal oxide semiconductors Metal-insulator-semiconductor structures (including semiconductor-to-insulator) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon dioxide Surface double layers, schottky barriers, and work functions
Online-Zugang:	Volltext
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