Effect of boiling aqua regia on MOCVD and MBE p-type GaN surfaces and Cr/p-GaN interfaces
The effect of boiling aqua regia treatment on MOCVD and MBE p-GaN surface and p-GaN/Cr interface is examined with I–V measurements and X-ray photoelectron spectroscopy. The MBE p-GaN/Cr/Au contacts are of lower resistance in all cases, as compared to their MOCVD counterparts. Upon boiling aqua regia...
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| Veröffentlicht in: | Microelectronic engineering 2012-02, Vol.90 (Feb), p.115-117 |
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| creator | Kalaitzakis, F.G. Konstantinidis, G. Sygellou, L. Kennou, S. Ladas, S. Pelekanos, N.T. |
| description | The effect of boiling aqua regia treatment on MOCVD and MBE p-GaN surface and p-GaN/Cr interface is examined with I–V measurements and X-ray photoelectron spectroscopy. The MBE p-GaN/Cr/Au contacts are of lower resistance in all cases, as compared to their MOCVD counterparts. Upon boiling aqua regia treatment, the surface of the MBE p-GaN material appeared to be more stable, as opposed to the increased sensitivity of the MOCVD one. As a result of the different behavior of the two samples surfaces was the fact that surface Fermi energy levels of MOCVD and MBE p-GaN moved towards opposite directions, which improved the contacts formed on the MOCVD sample in contrast to the MBE one, as confirmed by electrical characterization. Finally, the formation of Ga–Cr phase at the MOCVD p-GaN/Cr interface is detected, without any thermal treatment of the contacts. A possible formation mechanism which might explain the binary phase formation is presented and discussed. |
| doi_str_mv | 10.1016/j.mee.2011.04.066 |
| format | Article |
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The MBE p-GaN/Cr/Au contacts are of lower resistance in all cases, as compared to their MOCVD counterparts. Upon boiling aqua regia treatment, the surface of the MBE p-GaN material appeared to be more stable, as opposed to the increased sensitivity of the MOCVD one. As a result of the different behavior of the two samples surfaces was the fact that surface Fermi energy levels of MOCVD and MBE p-GaN moved towards opposite directions, which improved the contacts formed on the MOCVD sample in contrast to the MBE one, as confirmed by electrical characterization. Finally, the formation of Ga–Cr phase at the MOCVD p-GaN/Cr interface is detected, without any thermal treatment of the contacts. A possible formation mechanism which might explain the binary phase formation is presented and discussed.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2011.04.066</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; As deposited contacts ; Boiling ; Chemical physics ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Chromium ; Circuit properties ; Cross-disciplinary physics: materials science; rheology ; Electric, optical and optoelectronic circuits ; Electrical measurements ; Electronics ; Exact sciences and technology ; Fermi surfaces ; Gallides ; Gallium nitrides ; Integrated optoelectronics. Optoelectronic circuits ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Microelectronic fabrication (materials and surfaces technology) ; Microelectronics ; Molecular beam epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Nitrides ; Optical and optoelectronic circuits ; Optoelectronics ; p-Type GaN ; Photoelectron spectroscopy ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Surfaces and interfaces ; Volt-ampere characteristics ; X-rays</subject><ispartof>Microelectronic engineering, 2012-02, Vol.90 (Feb), p.115-117</ispartof><rights>2011</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-522861f4fdc2b2800599f1fe3a5c3ded88e6c952de3435b8853886949b89f1363</citedby><cites>FETCH-LOGICAL-c360t-522861f4fdc2b2800599f1fe3a5c3ded88e6c952de3435b8853886949b89f1363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S016793171100493X$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27902,27903,65308</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25363223$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kalaitzakis, F.G.</creatorcontrib><creatorcontrib>Konstantinidis, G.</creatorcontrib><creatorcontrib>Sygellou, L.</creatorcontrib><creatorcontrib>Kennou, S.</creatorcontrib><creatorcontrib>Ladas, S.</creatorcontrib><creatorcontrib>Pelekanos, N.T.</creatorcontrib><title>Effect of boiling aqua regia on MOCVD and MBE p-type GaN surfaces and Cr/p-GaN interfaces</title><title>Microelectronic engineering</title><description>The effect of boiling aqua regia treatment on MOCVD and MBE p-GaN surface and p-GaN/Cr interface is examined with I–V measurements and X-ray photoelectron spectroscopy. The MBE p-GaN/Cr/Au contacts are of lower resistance in all cases, as compared to their MOCVD counterparts. Upon boiling aqua regia treatment, the surface of the MBE p-GaN material appeared to be more stable, as opposed to the increased sensitivity of the MOCVD one. As a result of the different behavior of the two samples surfaces was the fact that surface Fermi energy levels of MOCVD and MBE p-GaN moved towards opposite directions, which improved the contacts formed on the MOCVD sample in contrast to the MBE one, as confirmed by electrical characterization. Finally, the formation of Ga–Cr phase at the MOCVD p-GaN/Cr interface is detected, without any thermal treatment of the contacts. A possible formation mechanism which might explain the binary phase formation is presented and discussed.</description><subject>Applied sciences</subject><subject>As deposited contacts</subject><subject>Boiling</subject><subject>Chemical physics</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Chromium</subject><subject>Circuit properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electrical measurements</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fermi surfaces</subject><subject>Gallides</subject><subject>Gallium nitrides</subject><subject>Integrated optoelectronics. Optoelectronic circuits</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Microelectronics</subject><subject>Molecular beam epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Nitrides</subject><subject>Optical and optoelectronic circuits</subject><subject>Optoelectronics</subject><subject>p-Type GaN</subject><subject>Photoelectron spectroscopy</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Surfaces and interfaces</subject><subject>Volt-ampere characteristics</subject><subject>X-rays</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kMtOwzAQRS0EEuXxAey8QWKT1I_YdcQKSnlILd0AEivLdcbIVZoEO0Hq3-NSxJLVaMZn7h1fhC4oySmhcrzONwA5I5TmpMiJlAdoRNWEZ0JIdYhGiZlkJaeTY3QS45qkviBqhN5nzoHtcevwqvW1bz6w-RwMDvDhDW4bvFhO3-6waSq8uJ3hLuu3HeAH84zjEJyxEH_epmHcZbupb3rYz8_QkTN1hPPfeope72cv08dsvnx4mt7MM8sl6TPBmJLUFa6ybMUUIaIsHXXAjbC8gkopkLYUrAJecLFSSnClZFmUK5U4LvkputrrdqH9HCD2euOjhbo2DbRD1JQkh-QieULpHrWhjTGA013wGxO2CdK7GPVapxj1LkZNCp1iTDuXv_ImWlO7YBrr498iE-kExnba13sO0l-_PAQdrYfGQuVDClhXrf_H5RtqfYRL</recordid><startdate>20120201</startdate><enddate>20120201</enddate><creator>Kalaitzakis, F.G.</creator><creator>Konstantinidis, G.</creator><creator>Sygellou, L.</creator><creator>Kennou, S.</creator><creator>Ladas, S.</creator><creator>Pelekanos, N.T.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120201</creationdate><title>Effect of boiling aqua regia on MOCVD and MBE p-type GaN surfaces and Cr/p-GaN interfaces</title><author>Kalaitzakis, F.G. ; Konstantinidis, G. ; Sygellou, L. ; Kennou, S. ; Ladas, S. ; Pelekanos, N.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-522861f4fdc2b2800599f1fe3a5c3ded88e6c952de3435b8853886949b89f1363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>As deposited contacts</topic><topic>Boiling</topic><topic>Chemical physics</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Chromium</topic><topic>Circuit properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electrical measurements</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fermi surfaces</topic><topic>Gallides</topic><topic>Gallium nitrides</topic><topic>Integrated optoelectronics. Optoelectronic circuits</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Microelectronics</topic><topic>Molecular beam epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Nitrides</topic><topic>Optical and optoelectronic circuits</topic><topic>Optoelectronics</topic><topic>p-Type GaN</topic><topic>Photoelectron spectroscopy</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Surfaces and interfaces</topic><topic>Volt-ampere characteristics</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kalaitzakis, F.G.</creatorcontrib><creatorcontrib>Konstantinidis, G.</creatorcontrib><creatorcontrib>Sygellou, L.</creatorcontrib><creatorcontrib>Kennou, S.</creatorcontrib><creatorcontrib>Ladas, S.</creatorcontrib><creatorcontrib>Pelekanos, N.T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kalaitzakis, F.G.</au><au>Konstantinidis, G.</au><au>Sygellou, L.</au><au>Kennou, S.</au><au>Ladas, S.</au><au>Pelekanos, N.T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of boiling aqua regia on MOCVD and MBE p-type GaN surfaces and Cr/p-GaN interfaces</atitle><jtitle>Microelectronic engineering</jtitle><date>2012-02-01</date><risdate>2012</risdate><volume>90</volume><issue>Feb</issue><spage>115</spage><epage>117</epage><pages>115-117</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>The effect of boiling aqua regia treatment on MOCVD and MBE p-GaN surface and p-GaN/Cr interface is examined with I–V measurements and X-ray photoelectron spectroscopy. The MBE p-GaN/Cr/Au contacts are of lower resistance in all cases, as compared to their MOCVD counterparts. Upon boiling aqua regia treatment, the surface of the MBE p-GaN material appeared to be more stable, as opposed to the increased sensitivity of the MOCVD one. As a result of the different behavior of the two samples surfaces was the fact that surface Fermi energy levels of MOCVD and MBE p-GaN moved towards opposite directions, which improved the contacts formed on the MOCVD sample in contrast to the MBE one, as confirmed by electrical characterization. Finally, the formation of Ga–Cr phase at the MOCVD p-GaN/Cr interface is detected, without any thermal treatment of the contacts. A possible formation mechanism which might explain the binary phase formation is presented and discussed.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2011.04.066</doi><tpages>3</tpages></addata></record> |
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| subjects | Applied sciences As deposited contacts Boiling Chemical physics Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chromium Circuit properties Cross-disciplinary physics: materials science rheology Electric, optical and optoelectronic circuits Electrical measurements Electronics Exact sciences and technology Fermi surfaces Gallides Gallium nitrides Integrated optoelectronics. Optoelectronic circuits Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Microelectronics Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nitrides Optical and optoelectronic circuits Optoelectronics p-Type GaN Photoelectron spectroscopy Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surfaces and interfaces Volt-ampere characteristics X-rays |
| title | Effect of boiling aqua regia on MOCVD and MBE p-type GaN surfaces and Cr/p-GaN interfaces |
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