Analytical-Numerical Model for the Transconductance of Microwave AlGaN/GaN High Electron Mobility Transistors

An analytical-numerical model for I-V characteristics of AlGaN/GaN based high electron mobility transistors has been developed that is capable to predict accurately effects of depletion layer thickness on the transconductance in gate voltage. Salient features of the model are incorporated of fully a...

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Veröffentlicht in:	Journal of materials science and engineering. B 2011-06, Vol.1 (1), p.121-129
Hauptverfasser:	Yahyazadeh, R, Hashempour, Z
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Gallium nitrides Gates High electron mobility transistors Mathematical analysis Mathematical models Semiconductor devices Transconductance
Online-Zugang:	Volltext
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