Analytical-Numerical Model for the Transconductance of Microwave AlGaN/GaN High Electron Mobility Transistors

An analytical-numerical model for I-V characteristics of AlGaN/GaN based high electron mobility transistors has been developed that is capable to predict accurately effects of depletion layer thickness on the transconductance in gate voltage. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schroedinger and Poisson equations and including the effects of the temperature (in band gaps, threshold voltage, mobility, electron density), virtual gate, band bending and electron trap states (interface and surface traps). The results of the model are in very good agreement with existing experimental data for AlGaN/GaN based high electron mobility transistors device.