Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications
A novel monolithically-integrated LED and HEMT sensor, based on III-nitrides, is designed and realized. The main aspects of the design and processing issues of such a device are presented and discussed. Satisfactory operation of both LED and HEMT parts of the device was ascertained by means of elect...
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| Veröffentlicht in: | Microelectronic engineering 2012-02, Vol.90 (Feb), p.33-36 |
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| container_issue | Feb |
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| container_title | Microelectronic engineering |
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| creator | Kalaitzakis, F.G. Iliopoulos, E. Konstantinidis, G. Pelekanos, N.T. |
| description | A novel monolithically-integrated LED and HEMT sensor, based on III-nitrides, is designed and realized. The main aspects of the design and processing issues of such a device are presented and discussed. Satisfactory operation of both LED and HEMT parts of the device was ascertained by means of electrical characterization. The best obtained turn-on voltage for the LED part of the device was as low as ∼4.5V, which is quite acceptable for nitrides, while the IDSsat value of ∼26mA/mm for the HEMT part, is rather low as compared to typical AlGaN/GaN HEMTs. Moreover, intense light emission was readily obtained from the LED, with a large portion of light illuminating the sensor active area. The overall satisfying performance of the integrated device opens the way for actual sensing experiments to be performed. |
| doi_str_mv | 10.1016/j.mee.2011.04.067 |
| format | Article |
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The main aspects of the design and processing issues of such a device are presented and discussed. Satisfactory operation of both LED and HEMT parts of the device was ascertained by means of electrical characterization. The best obtained turn-on voltage for the LED part of the device was as low as ∼4.5V, which is quite acceptable for nitrides, while the IDSsat value of ∼26mA/mm for the HEMT part, is rather low as compared to typical AlGaN/GaN HEMTs. Moreover, intense light emission was readily obtained from the LED, with a large portion of light illuminating the sensor active area. 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The main aspects of the design and processing issues of such a device are presented and discussed. Satisfactory operation of both LED and HEMT parts of the device was ascertained by means of electrical characterization. The best obtained turn-on voltage for the LED part of the device was as low as ∼4.5V, which is quite acceptable for nitrides, while the IDSsat value of ∼26mA/mm for the HEMT part, is rather low as compared to typical AlGaN/GaN HEMTs. Moreover, intense light emission was readily obtained from the LED, with a large portion of light illuminating the sensor active area. The overall satisfying performance of the integrated device opens the way for actual sensing experiments to be performed.</description><subject>Applied sciences</subject><subject>Biological sensing</subject><subject>Chemical sensing</subject><subject>Design. Technologies. Operation analysis. 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| ispartof | Microelectronic engineering, 2012-02, Vol.90 (Feb), p.33-36 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Biological sensing Chemical sensing Design. Technologies. Operation analysis. Testing Detection Devices Electronics Exact sciences and technology Gallium nitrides General equipment and techniques HEMT based sensor High electron mobility transistors Instruments, apparatus, components and techniques common to several branches of physics and astronomy Integrated circuits Light-emitting diodes Nitride LED Optoelectronic devices Physics Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensor Sensors Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Transistors Voltage |
| title | Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications |
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