MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

We study the electro optical properties of a Metal-Nitride-Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si(3)N(4) layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNO...

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Veröffentlicht in:	Optics express 2012-06, Vol.20 (13), p.13612-13621
Hauptverfasser:	Emboras, Alexandros, Najar, Adel, Nambiar, Siddharth, Grosse, Philippe, Augendre, Emmanuel, Leroux, Charles, de Salvo, Barbara, de Lamaestre, Roch Espiau
Format:	Artikel
Sprache:	eng
Schlagworte:	Copper - chemistry Energy Transfer Equipment Design Equipment Failure Analysis Light Refractometry - instrumentation Scattering, Radiation Surface Plasmon Resonance - instrumentation Transistors, Electronic
Online-Zugang:	Volltext
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