The sensitivity of 100<ce:hsp sp="0.25"/>nm RADFETs with zero gate bias up to dose of 230<ce:hsp sp="0.25"/>Gy(Si)

The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from 60Co gamma-ray source to dose of 230Gy(Si) without gate bias, and their reproducibility and sensitivity to radiation were investigated. The completely automatic system containing switching matrix have been used, enabling very r...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2011-12, Vol.269 (23), p.2703-2708
Hauptverfasser:	Ristic, Goran S, Vasovic, Nikola D, Kovacevic, Milojko, Jaksic, Aleksandar B
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Borders Density Gates Irradiation Oxides Reproducibility Switching
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!