The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs
In this paper, the relation between the surface electric field and the temperature distribution dependence on the drift-region doping concentration in a 30-V asymmetric drain-extended MOSFET is studied. For the case of high drift-region concentration, the drain resistance is low, and the current den...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-04, Vol.59 (4), p.1149-1154 |
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| container_title | IEEE transactions on electron devices |
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| creator | Chu, Chen-Liang Hu, Chih-Min Hung, Chung-Yu Gong, Jeng Huang, Chih-Fang Chen, Fei-Yun Liou, Ruey-Hsin Tuan, Hsiao-Chin |
| description | In this paper, the relation between the surface electric field and the temperature distribution dependence on the drift-region doping concentration in a 30-V asymmetric drain-extended MOSFET is studied. For the case of high drift-region concentration, the drain resistance is low, and the current density is high, which induces a high nonuniform temperature distribution in the transistor, which in turn reduces the carrier mobility and causes a negative drain resistance. For the case of low drift-region concentration, a uniform temperature distribution is obtained. However, the different drift-region concentration changes the location of the maximum temperature from the gate-overlapped drift region for the high concentration case to the drain-side contact region for the low concentration case under the high V GS and V DS conditions. Therefore, the self-heating effect is also changed by the redistribution of the electric field in the drift region. |
| doi_str_mv | 10.1109/TED.2012.2183373 |
| format | Article |
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For the case of high drift-region concentration, the drain resistance is low, and the current density is high, which induces a high nonuniform temperature distribution in the transistor, which in turn reduces the carrier mobility and causes a negative drain resistance. For the case of low drift-region concentration, a uniform temperature distribution is obtained. However, the different drift-region concentration changes the location of the maximum temperature from the gate-overlapped drift region for the high concentration case to the drain-side contact region for the low concentration case under the high V GS and V DS conditions. Therefore, the self-heating effect is also changed by the redistribution of the electric field in the drift region.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2183373</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Contact ; Drain-extended metal-oxide-semiconductor field-effect transistors (DEMOSFETs) ; Drains ; Drift ; Educational institutions ; Electric contacts ; Electric fields ; Electronics ; Exact sciences and technology ; Logic gates ; MOSFETs ; Resistance ; self-heating effect ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Skewed distributions ; Substrates ; surface electric field ; Temperature distribution ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1149-1154</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c306t-d78d3d2a6bfc08744f2da6be6413231e2f78650ab2b9dc31e22aa4c7a9f43b273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6152141$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6152141$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26015817$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chu, Chen-Liang</creatorcontrib><creatorcontrib>Hu, Chih-Min</creatorcontrib><creatorcontrib>Hung, Chung-Yu</creatorcontrib><creatorcontrib>Gong, Jeng</creatorcontrib><creatorcontrib>Huang, Chih-Fang</creatorcontrib><creatorcontrib>Chen, Fei-Yun</creatorcontrib><creatorcontrib>Liou, Ruey-Hsin</creatorcontrib><creatorcontrib>Tuan, Hsiao-Chin</creatorcontrib><title>The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, the relation between the surface electric field and the temperature distribution dependence on the drift-region doping concentration in a 30-V asymmetric drain-extended MOSFET is studied. For the case of high drift-region concentration, the drain resistance is low, and the current density is high, which induces a high nonuniform temperature distribution in the transistor, which in turn reduces the carrier mobility and causes a negative drain resistance. For the case of low drift-region concentration, a uniform temperature distribution is obtained. However, the different drift-region concentration changes the location of the maximum temperature from the gate-overlapped drift region for the high concentration case to the drain-side contact region for the low concentration case under the high V GS and V DS conditions. Therefore, the self-heating effect is also changed by the redistribution of the electric field in the drift region.</description><subject>Applied sciences</subject><subject>Contact</subject><subject>Drain-extended metal-oxide-semiconductor field-effect transistors (DEMOSFETs)</subject><subject>Drains</subject><subject>Drift</subject><subject>Educational institutions</subject><subject>Electric contacts</subject><subject>Electric fields</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Logic gates</subject><subject>MOSFETs</subject><subject>Resistance</subject><subject>self-heating effect</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Skewed distributions</subject><subject>Substrates</subject><subject>surface electric field</subject><subject>Temperature distribution</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM9LwzAUx4MoOKd3wUsRBC-d-dWkOcpWnTCZsOm1pGmydXTtTFJw_72pGzt4Sr7vfd6X974A3CI4QgiKp2U2GWGI8AijlBBOzsAAJQmPBaPsHAwgRGksSEouwZVzmyAZpXgA5su1jha-K_dRayIfRFZr5W0bvnYr6-jDtjtt_V97Wq3W8Vdbe7nS0cTKqomzH6-bUpfR-3zxki3dNbgwsnb65vgOwWcoj6fxbP76Nn6exYpA5uOSpyUpsWSFUTDllBpcBqEZRQQTpLHhKUugLHAhStUXsJRUcSkMJQXmZAgeD74723532vl8Wzml61o2uu1cjiASLOEpxQG9_4du2s42YbtcUChIQiEJEDxAyrbOWW3yna220u6DU94HnIeA8z7g_BhwGHk4-kqnZG2sbFTlTnOYQZSkqF_17sBVWutTm6EEo3DtL_5Mgc0</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Chu, Chen-Liang</creator><creator>Hu, Chih-Min</creator><creator>Hung, Chung-Yu</creator><creator>Gong, Jeng</creator><creator>Huang, Chih-Fang</creator><creator>Chen, Fei-Yun</creator><creator>Liou, Ruey-Hsin</creator><creator>Tuan, Hsiao-Chin</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Skewed distributions</topic><topic>Substrates</topic><topic>surface electric field</topic><topic>Temperature distribution</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chu, Chen-Liang</creatorcontrib><creatorcontrib>Hu, Chih-Min</creatorcontrib><creatorcontrib>Hung, Chung-Yu</creatorcontrib><creatorcontrib>Gong, Jeng</creatorcontrib><creatorcontrib>Huang, Chih-Fang</creatorcontrib><creatorcontrib>Chen, Fei-Yun</creatorcontrib><creatorcontrib>Liou, Ruey-Hsin</creatorcontrib><creatorcontrib>Tuan, Hsiao-Chin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chu, Chen-Liang</au><au>Hu, Chih-Min</au><au>Hung, Chung-Yu</au><au>Gong, Jeng</au><au>Huang, Chih-Fang</au><au>Chen, Fei-Yun</au><au>Liou, Ruey-Hsin</au><au>Tuan, Hsiao-Chin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-04-01</date><risdate>2012</risdate><volume>59</volume><issue>4</issue><spage>1149</spage><epage>1154</epage><pages>1149-1154</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, the relation between the surface electric field and the temperature distribution dependence on the drift-region doping concentration in a 30-V asymmetric drain-extended MOSFET is studied. For the case of high drift-region concentration, the drain resistance is low, and the current density is high, which induces a high nonuniform temperature distribution in the transistor, which in turn reduces the carrier mobility and causes a negative drain resistance. For the case of low drift-region concentration, a uniform temperature distribution is obtained. However, the different drift-region concentration changes the location of the maximum temperature from the gate-overlapped drift region for the high concentration case to the drain-side contact region for the low concentration case under the high V GS and V DS conditions. Therefore, the self-heating effect is also changed by the redistribution of the electric field in the drift region.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2012.2183373</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Contact Drain-extended metal-oxide-semiconductor field-effect transistors (DEMOSFETs) Drains Drift Educational institutions Electric contacts Electric fields Electronics Exact sciences and technology Logic gates MOSFETs Resistance self-heating effect Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Skewed distributions Substrates surface electric field Temperature distribution Transistors |
| title | The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs |
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