Tunable metal–insulator transition in double-layer graphene heterostructures
Disorder-induced Anderson localization usually causes conducting materials to become insulating at low temperature. Graphene is a notable exception. But by increasing the carrier density in one graphene layer, a metal–insulator transition can be induced in an isolated second layer stacked above it....
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Veröffentlicht in: | Nature physics 2011-12, Vol.7 (12), p.958-961 |
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Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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