Structural and magnetic properties of Ni2MnIn Heusler thin films grown on modulation-doped InAs heterostructures with metamorphic buffer

This paper reports on the morphological, structural, magnetic, and magneto-optic properties of Ni2MnIn Heusler films grown on InAs-high electron-mobility transistor structures (HEMT) with metamorphic buffers for spintronic applications. Similar to our previous results on the Ni2MnIn/InAs (001) syste...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2012, Vol.338 (1), p.91-95
Hauptverfasser:	BOHSE, S, ZOLOTARYOV, A, VOLLAND, A, LANDGRAF, B, ALBRECHT, O, BASTJAN, M, VOSSMEYER, T, GÖRLITZ, D, HEYN, Ch, HANSEN, W
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Buffers Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Density Electronics Exact sciences and technology Hysteresis loops Indium arsenides Magnetic properties Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Materials science Metamorphic Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Structure of solids and liquids crystallography Structure of specific crystalline solids Thin films Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!