The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer
InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller effici...
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| Veröffentlicht in: | Chinese physics B 2011-09, Vol.20 (9), p.098503-jQuery1323921975411='48' |
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| creator | Lu, Tai-Ping (太平 卢) Li, Shu-Ti (述体 李) Zhang, Kang (康张) Liu, Chao (超刘) Xiao, Guo-Wei (国伟 肖) Zhou, Yu-Gang (玉刚 周) Zheng, Shu-Wen (树文 郑) Yin, Yi-An (以安 尹) Wu, Le-Juan (乐娟 仵) Wang, Hai-Long (海龙 王) Yang, Xiao-Dong (孝东 杨) |
| description | InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs). |
| doi_str_mv | 10.1088/1674-1056/20/9/098503 |
| format | Article |
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It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. 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It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs).</description><subject>Computer programs</subject><subject>Computer simulation</subject><subject>Electric power generation</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Light-emitting diodes</subject><subject>Quantum wells</subject><subject>Software</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNkUtPwzAQhC0EEuXxE5B85EDoxo7t-IgQlEoILuVsOcmmNTgPYgfUf0-qIk5IcNrDfjMazRBykcJ1Cnk-T6XKkhSEnDOY6znoXAA_IDMGIk94zrNDMvthjslJCK8AMgXGZ6RZbZDa6sO20a6RdjUt_Ih02S7sE21GH13vkb6P039s6Cd6H6h3601MsHExunZNK9dVGOinixvaJzd-2T5R9FjGoWsnt65821HebnE4I0e19QHPv-8pebm_W90-JI_Pi-XtzWNScq1iUmGmbC4LrOSUU9pUCa64Fbms6ppbWVrBytoyhjxDkLqsNRTABJOq0IXi_JRc7n37oXsfMUTTuFBO4W2L3RhMqlQOgukM_kZh6lhzpbMJFXu0HLoQBqxNP7jGDtsJMrslzK5ls2vZMDDa7JeYdLDXua7_t-TqF8lvqOmrmn8BKQWXvA</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Lu, Tai-Ping (太平 卢)</creator><creator>Li, Shu-Ti (述体 李)</creator><creator>Zhang, Kang (康张)</creator><creator>Liu, Chao (超刘)</creator><creator>Xiao, Guo-Wei (国伟 肖)</creator><creator>Zhou, Yu-Gang (玉刚 周)</creator><creator>Zheng, Shu-Wen (树文 郑)</creator><creator>Yin, Yi-An (以安 尹)</creator><creator>Wu, Le-Juan (乐娟 仵)</creator><creator>Wang, Hai-Long (海龙 王)</creator><creator>Yang, Xiao-Dong (孝东 杨)</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110901</creationdate><title>The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer</title><author>Lu, Tai-Ping (太平 卢) ; Li, Shu-Ti (述体 李) ; Zhang, Kang (康张) ; Liu, Chao (超刘) ; Xiao, Guo-Wei (国伟 肖) ; Zhou, Yu-Gang (玉刚 周) ; Zheng, Shu-Wen (树文 郑) ; Yin, Yi-An (以安 尹) ; Wu, Le-Juan (乐娟 仵) ; Wang, Hai-Long (海龙 王) ; Yang, Xiao-Dong (孝东 杨)</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c397t-de47a86bed60616a175373a586dff3a6ca52cfa22e34e069cf90b025267b9b733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Computer programs</topic><topic>Computer simulation</topic><topic>Electric power generation</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Light-emitting diodes</topic><topic>Quantum wells</topic><topic>Software</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Tai-Ping (太平 卢)</creatorcontrib><creatorcontrib>Li, Shu-Ti (述体 李)</creatorcontrib><creatorcontrib>Zhang, Kang (康张)</creatorcontrib><creatorcontrib>Liu, Chao (超刘)</creatorcontrib><creatorcontrib>Xiao, Guo-Wei (国伟 肖)</creatorcontrib><creatorcontrib>Zhou, Yu-Gang (玉刚 周)</creatorcontrib><creatorcontrib>Zheng, Shu-Wen (树文 郑)</creatorcontrib><creatorcontrib>Yin, Yi-An (以安 尹)</creatorcontrib><creatorcontrib>Wu, Le-Juan (乐娟 仵)</creatorcontrib><creatorcontrib>Wang, Hai-Long (海龙 王)</creatorcontrib><creatorcontrib>Yang, Xiao-Dong (孝东 杨)</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Tai-Ping (太平 卢)</au><au>Li, Shu-Ti (述体 李)</au><au>Zhang, Kang (康张)</au><au>Liu, Chao (超刘)</au><au>Xiao, Guo-Wei (国伟 肖)</au><au>Zhou, Yu-Gang (玉刚 周)</au><au>Zheng, Shu-Wen (树文 郑)</au><au>Yin, Yi-An (以安 尹)</au><au>Wu, Le-Juan (乐娟 仵)</au><au>Wang, Hai-Long (海龙 王)</au><au>Yang, Xiao-Dong (孝东 杨)</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer</atitle><jtitle>Chinese physics B</jtitle><date>2011-09-01</date><risdate>2011</risdate><volume>20</volume><issue>9</issue><spage>098503</spage><epage>jQuery1323921975411='48'</epage><pages>098503-jQuery1323921975411='48'</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs).</abstract><pub>IOP Publishing</pub><doi>10.1088/1674-1056/20/9/098503</doi></addata></record> |
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| source | IOP Publishing Journals |
| subjects | Computer programs Computer simulation Electric power generation Gallium nitrides Indium gallium nitrides Light-emitting diodes Quantum wells Software |
| title | The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer |
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