Enhanced Electrical and Thermal Properties of Trench Metal-Oxide-Semiconductor Field-Effect Transistor Built on Copper Substrate
Vertical metal-oxide-semiconductor field-effect transistors (UMOSFETs) were built on silicon substrates thinned to 7 mum and plated with 50- mum copper as drain electrode and mechanical support. Compared to the same devices on silicon substrates of 200 mum thick, the UMOSFET on 7-mum silicon demonst...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2009-01, Vol.30 (1), p.61-63 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 63 |
|---|---|
| container_issue | 1 |
| container_start_page | 61 |
| container_title | IEEE electron device letters |
| container_volume | 30 |
| creator | QI WANG HO, Ihsiu MINHUA LI |
| description | Vertical metal-oxide-semiconductor field-effect transistors (UMOSFETs) were built on silicon substrates thinned to 7 mum and plated with 50- mum copper as drain electrode and mechanical support. Compared to the same devices on silicon substrates of 200 mum thick, the UMOSFET on 7-mum silicon demonstrates at least 16% less channel resistance and two times better device ruggedness. The reduced resistance is due to enhanced carrier mobility caused by increasing biaxial compressive thermal stress in silicon perpendicular to the channel, which is confirmed by a 3-D piezoresistance model. The doubling of ruggedness is attributed to a much improved transient thermal conductance. |
| doi_str_mv | 10.1109/LED.2008.2008032 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_1010891255</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4721602</ieee_id><sourcerecordid>2543440481</sourcerecordid><originalsourceid>FETCH-LOGICAL-c384t-f52c7b5589bf5b9da0ff0668bcc1445abb4d2e1f0200d748c668cd7dc2e6b6a63</originalsourceid><addsrcrecordid>eNp9kc2LFDEQxYMoOI7eBS9BULz0Wvnor6OOvSqMrLDjuUknFSZLTzImadCbf7qZnWEPHrwkIfWrV7x6hLxkcMUY9O-3w6crDtDdHyD4I7Jidd1VUDfiMVlBK1klGDRPybOU7gCYlK1ckT-D3yuv0dBhRp2j02qmyhu622M8lPf3GI4Ys8NEg6W7iF7v6TfMaq5ufjmD1S0enA7eLDqHSK8dzqYarC1ihVY-uXT6_7i4OdPg6SYcix69XaaUo8r4nDyxak744nKvyY_rYbf5Um1vPn_dfNhWWnQyV7bmup2KoX6y9dQbBdZC03ST1sVJraZJGo7MQrFvWtnpUtOmNZpjMzWqEWvy9qx7jOHngimPB5c0zrPyGJY0Cin7TpbNrcm7_4IMGHQ943Vd0Nf_oHdhib7YGAsAnAt5GgxnSMeQUkQ7HqM7qPi7KI2n6MYS3XhKbbxEV1reXHRVKnnYskbt0kMfZ0I03T336sw5RHwoy5azBrj4Cy8Goms</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912022346</pqid></control><display><type>article</type><title>Enhanced Electrical and Thermal Properties of Trench Metal-Oxide-Semiconductor Field-Effect Transistor Built on Copper Substrate</title><source>IEEE Electronic Library (IEL)</source><creator>QI WANG ; HO, Ihsiu ; MINHUA LI</creator><creatorcontrib>QI WANG ; HO, Ihsiu ; MINHUA LI</creatorcontrib><description>Vertical metal-oxide-semiconductor field-effect transistors (UMOSFETs) were built on silicon substrates thinned to 7 mum and plated with 50- mum copper as drain electrode and mechanical support. Compared to the same devices on silicon substrates of 200 mum thick, the UMOSFET on 7-mum silicon demonstrates at least 16% less channel resistance and two times better device ruggedness. The reduced resistance is due to enhanced carrier mobility caused by increasing biaxial compressive thermal stress in silicon perpendicular to the channel, which is confirmed by a 3-D piezoresistance model. The doubling of ruggedness is attributed to a much improved transient thermal conductance.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.2008032</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitive sensors ; Channel resistance ; Channels ; CMOS technology ; Compressive stress ; Copper ; Devices ; ELECTRONIC PRODUCTS ; Electronics ; Exact sciences and technology ; FETs ; heat dissipation ; mobility ; MOSFET circuits ; OXIDES ; PROPERTIES ; Ruggedness ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SEMICONDUCTORS ; Silicon ; silicon on metal (SOM) ; Silicon substrates ; Strain measurement ; THERMAL PROPERTIES ; Thermal resistance ; thermal stress ; Thermal stresses ; TRANSISTORS ; unclamped inductive switching (UIS) ; vertical metal-oxide-semiconductor field-effect transistor (UMOSFET)</subject><ispartof>IEEE electron device letters, 2009-01, Vol.30 (1), p.61-63</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-f52c7b5589bf5b9da0ff0668bcc1445abb4d2e1f0200d748c668cd7dc2e6b6a63</citedby><cites>FETCH-LOGICAL-c384t-f52c7b5589bf5b9da0ff0668bcc1445abb4d2e1f0200d748c668cd7dc2e6b6a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4721602$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,4010,27900,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4721602$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21336832$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>QI WANG</creatorcontrib><creatorcontrib>HO, Ihsiu</creatorcontrib><creatorcontrib>MINHUA LI</creatorcontrib><title>Enhanced Electrical and Thermal Properties of Trench Metal-Oxide-Semiconductor Field-Effect Transistor Built on Copper Substrate</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Vertical metal-oxide-semiconductor field-effect transistors (UMOSFETs) were built on silicon substrates thinned to 7 mum and plated with 50- mum copper as drain electrode and mechanical support. Compared to the same devices on silicon substrates of 200 mum thick, the UMOSFET on 7-mum silicon demonstrates at least 16% less channel resistance and two times better device ruggedness. The reduced resistance is due to enhanced carrier mobility caused by increasing biaxial compressive thermal stress in silicon perpendicular to the channel, which is confirmed by a 3-D piezoresistance model. The doubling of ruggedness is attributed to a much improved transient thermal conductance.</description><subject>Applied sciences</subject><subject>Capacitive sensors</subject><subject>Channel resistance</subject><subject>Channels</subject><subject>CMOS technology</subject><subject>Compressive stress</subject><subject>Copper</subject><subject>Devices</subject><subject>ELECTRONIC PRODUCTS</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>heat dissipation</subject><subject>mobility</subject><subject>MOSFET circuits</subject><subject>OXIDES</subject><subject>PROPERTIES</subject><subject>Ruggedness</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SEMICONDUCTORS</subject><subject>Silicon</subject><subject>silicon on metal (SOM)</subject><subject>Silicon substrates</subject><subject>Strain measurement</subject><subject>THERMAL PROPERTIES</subject><subject>Thermal resistance</subject><subject>thermal stress</subject><subject>Thermal stresses</subject><subject>TRANSISTORS</subject><subject>unclamped inductive switching (UIS)</subject><subject>vertical metal-oxide-semiconductor field-effect transistor (UMOSFET)</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc2LFDEQxYMoOI7eBS9BULz0Wvnor6OOvSqMrLDjuUknFSZLTzImadCbf7qZnWEPHrwkIfWrV7x6hLxkcMUY9O-3w6crDtDdHyD4I7Jidd1VUDfiMVlBK1klGDRPybOU7gCYlK1ckT-D3yuv0dBhRp2j02qmyhu622M8lPf3GI4Ys8NEg6W7iF7v6TfMaq5ufjmD1S0enA7eLDqHSK8dzqYarC1ihVY-uXT6_7i4OdPg6SYcix69XaaUo8r4nDyxak744nKvyY_rYbf5Um1vPn_dfNhWWnQyV7bmup2KoX6y9dQbBdZC03ST1sVJraZJGo7MQrFvWtnpUtOmNZpjMzWqEWvy9qx7jOHngimPB5c0zrPyGJY0Cin7TpbNrcm7_4IMGHQ943Vd0Nf_oHdhib7YGAsAnAt5GgxnSMeQUkQ7HqM7qPi7KI2n6MYS3XhKbbxEV1reXHRVKnnYskbt0kMfZ0I03T336sw5RHwoy5azBrj4Cy8Goms</recordid><startdate>200901</startdate><enddate>200901</enddate><creator>QI WANG</creator><creator>HO, Ihsiu</creator><creator>MINHUA LI</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>H8G</scope><scope>JG9</scope></search><sort><creationdate>200901</creationdate><title>Enhanced Electrical and Thermal Properties of Trench Metal-Oxide-Semiconductor Field-Effect Transistor Built on Copper Substrate</title><author>QI WANG ; HO, Ihsiu ; MINHUA LI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-f52c7b5589bf5b9da0ff0668bcc1445abb4d2e1f0200d748c668cd7dc2e6b6a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Capacitive sensors</topic><topic>Channel resistance</topic><topic>Channels</topic><topic>CMOS technology</topic><topic>Compressive stress</topic><topic>Copper</topic><topic>Devices</topic><topic>ELECTRONIC PRODUCTS</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>heat dissipation</topic><topic>mobility</topic><topic>MOSFET circuits</topic><topic>OXIDES</topic><topic>PROPERTIES</topic><topic>Ruggedness</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SEMICONDUCTORS</topic><topic>Silicon</topic><topic>silicon on metal (SOM)</topic><topic>Silicon substrates</topic><topic>Strain measurement</topic><topic>THERMAL PROPERTIES</topic><topic>Thermal resistance</topic><topic>thermal stress</topic><topic>Thermal stresses</topic><topic>TRANSISTORS</topic><topic>unclamped inductive switching (UIS)</topic><topic>vertical metal-oxide-semiconductor field-effect transistor (UMOSFET)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>QI WANG</creatorcontrib><creatorcontrib>HO, Ihsiu</creatorcontrib><creatorcontrib>MINHUA LI</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>QI WANG</au><au>HO, Ihsiu</au><au>MINHUA LI</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Electrical and Thermal Properties of Trench Metal-Oxide-Semiconductor Field-Effect Transistor Built on Copper Substrate</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2009-01</date><risdate>2009</risdate><volume>30</volume><issue>1</issue><spage>61</spage><epage>63</epage><pages>61-63</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Vertical metal-oxide-semiconductor field-effect transistors (UMOSFETs) were built on silicon substrates thinned to 7 mum and plated with 50- mum copper as drain electrode and mechanical support. Compared to the same devices on silicon substrates of 200 mum thick, the UMOSFET on 7-mum silicon demonstrates at least 16% less channel resistance and two times better device ruggedness. The reduced resistance is due to enhanced carrier mobility caused by increasing biaxial compressive thermal stress in silicon perpendicular to the channel, which is confirmed by a 3-D piezoresistance model. The doubling of ruggedness is attributed to a much improved transient thermal conductance.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2008.2008032</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2009-01, Vol.30 (1), p.61-63 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1010891255 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitive sensors Channel resistance Channels CMOS technology Compressive stress Copper Devices ELECTRONIC PRODUCTS Electronics Exact sciences and technology FETs heat dissipation mobility MOSFET circuits OXIDES PROPERTIES Ruggedness Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTORS Silicon silicon on metal (SOM) Silicon substrates Strain measurement THERMAL PROPERTIES Thermal resistance thermal stress Thermal stresses TRANSISTORS unclamped inductive switching (UIS) vertical metal-oxide-semiconductor field-effect transistor (UMOSFET) |
| title | Enhanced Electrical and Thermal Properties of Trench Metal-Oxide-Semiconductor Field-Effect Transistor Built on Copper Substrate |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T06%3A22%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhanced%20Electrical%20and%20Thermal%20Properties%20of%20Trench%20Metal-Oxide-Semiconductor%20Field-Effect%20Transistor%20Built%20on%20Copper%20Substrate&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=QI%20WANG&rft.date=2009-01&rft.volume=30&rft.issue=1&rft.spage=61&rft.epage=63&rft.pages=61-63&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2008.2008032&rft_dat=%3Cproquest_RIE%3E2543440481%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912022346&rft_id=info:pmid/&rft_ieee_id=4721602&rfr_iscdi=true |