N-Channel MOSFETs With Embedded Silicon-Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy
In this letter, we report the use of a novel cluster-carbon (C 7 H 7 + ) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration C sub of ~ 1.1% was obtained in this letter. N-ch...
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| Veröffentlicht in: | IEEE electron device letters 2008-12, Vol.29 (12), p.1315-1318 |
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| container_title | IEEE electron device letters |
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| creator | Shao-Ming Koh Sekar, K. Lee, D. Krull, W. Xincai Wang Samudra, G.S. Yee-Chia Yeo |
| description | In this letter, we report the use of a novel cluster-carbon (C 7 H 7 + ) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration C sub of ~ 1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. I OFF I DSAT comparison shows a 15% I DSAT enhancement for n-FETs with embedded Si:C S/D at an I OFF = 1 nA/mum despite a slightly higher series resistance. |
| doi_str_mv | 10.1109/LED.2008.2005648 |
| format | Article |
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A substitutional carbon concentration C sub of ~ 1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. I OFF I DSAT comparison shows a 15% I DSAT enhancement for n-FETs with embedded Si:C S/D at an I OFF = 1 nA/mum despite a slightly higher series resistance.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.2005648</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Carbon ; Clusters ; Drains ; Electronics ; Epitaxial growth ; Etching ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Gas lasers including excimer and metal-vapor lasers ; Implants ; Laser anneal ; Lasers ; Microelectronic fabrication (materials and surfaces technology) ; molecular carbon ; MOSFETs ; Optics ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; silicon carbon ; solid phase epitaxy (SPE) ; Solid phases ; Solids ; strain ; Strain control ; Stress concentration ; Stress control ; Throughput ; Transistors</subject><ispartof>IEEE electron device letters, 2008-12, Vol.29 (12), p.1315-1318</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c415t-8d1801b18145535f44dc34c0430054a3ccd4fa57acf0d4db7623dc8874fb0adc3</citedby><cites>FETCH-LOGICAL-c415t-8d1801b18145535f44dc34c0430054a3ccd4fa57acf0d4db7623dc8874fb0adc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4667669$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4667669$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20911837$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Shao-Ming Koh</creatorcontrib><creatorcontrib>Sekar, K.</creatorcontrib><creatorcontrib>Lee, D.</creatorcontrib><creatorcontrib>Krull, W.</creatorcontrib><creatorcontrib>Xincai Wang</creatorcontrib><creatorcontrib>Samudra, G.S.</creatorcontrib><creatorcontrib>Yee-Chia Yeo</creatorcontrib><title>N-Channel MOSFETs With Embedded Silicon-Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this letter, we report the use of a novel cluster-carbon (C 7 H 7 + ) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration C sub of ~ 1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. I OFF I DSAT comparison shows a 15% I DSAT enhancement for n-FETs with embedded Si:C S/D at an I OFF = 1 nA/mum despite a slightly higher series resistance.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Carbon</subject><subject>Clusters</subject><subject>Drains</subject><subject>Electronics</subject><subject>Epitaxial growth</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Gas lasers including excimer and metal-vapor lasers</subject><subject>Implants</subject><subject>Laser anneal</subject><subject>Lasers</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>molecular carbon</subject><subject>MOSFETs</subject><subject>Optics</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>silicon carbon</subject><subject>solid phase epitaxy (SPE)</subject><subject>Solid phases</subject><subject>Solids</subject><subject>strain</subject><subject>Strain control</subject><subject>Stress concentration</subject><subject>Stress control</subject><subject>Throughput</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkcFu1DAQhiMEEkvLHYmLhQTiktYTjxPniNIUVloo0rbqMXJsh3WVOFs7kdon4XVxtEsPPcBlrPF883s8f5K8A3oGQMvzTX1xllEqlsBzFC-SFXAu0piwl8mKFggpA5q_Tt6EcEcpIBa4Sn7_SKuddM705PvV9rK-DuTWTjtSD63R2miytb1Vo0sr6dvRke04e2XOL7y0MZm8CWH0gVyOfojwTbDuF6n6OUzG_21ZD_teuolIp0n9oOwQSxsZYlw7PavljbG3mvzcxUtS7-0kHx5Pk1ed7IN5ezxPkps4XPUt3Vx9XVdfNqlC4FMqNAgKLQhAzhnvELViqCiyuAWUTCmNneSFVB3VqNsiz5hWQhTYtVRG9iT5dNDd-_F-NmFqBhuU6ePEZpxDwxDLEkT2XzCjec6BlxH8_E8QKFAheIEY0Q_P0Lu4Xhf_25SQZYXg5QLRA6T8GII3XbP3dpD-MSo1i_VNtL5ZrG-O1seWj0ddGZTsOy-dsuGpL6MlgGBF5N4fOGuMeSpjnhd5XrI_uTW2Qw</recordid><startdate>20081201</startdate><enddate>20081201</enddate><creator>Shao-Ming Koh</creator><creator>Sekar, K.</creator><creator>Lee, D.</creator><creator>Krull, W.</creator><creator>Xincai Wang</creator><creator>Samudra, G.S.</creator><creator>Yee-Chia Yeo</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>silicon carbon</topic><topic>solid phase epitaxy (SPE)</topic><topic>Solid phases</topic><topic>Solids</topic><topic>strain</topic><topic>Strain control</topic><topic>Stress concentration</topic><topic>Stress control</topic><topic>Throughput</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shao-Ming Koh</creatorcontrib><creatorcontrib>Sekar, K.</creatorcontrib><creatorcontrib>Lee, D.</creatorcontrib><creatorcontrib>Krull, W.</creatorcontrib><creatorcontrib>Xincai Wang</creatorcontrib><creatorcontrib>Samudra, G.S.</creatorcontrib><creatorcontrib>Yee-Chia Yeo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>Biotechnology Research Abstracts</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shao-Ming Koh</au><au>Sekar, K.</au><au>Lee, D.</au><au>Krull, W.</au><au>Xincai Wang</au><au>Samudra, G.S.</au><au>Yee-Chia Yeo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>N-Channel MOSFETs With Embedded Silicon-Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2008-12-01</date><risdate>2008</risdate><volume>29</volume><issue>12</issue><spage>1315</spage><epage>1318</epage><pages>1315-1318</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In this letter, we report the use of a novel cluster-carbon (C 7 H 7 + ) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration C sub of ~ 1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. I OFF I DSAT comparison shows a 15% I DSAT enhancement for n-FETs with embedded Si:C S/D at an I OFF = 1 nA/mum despite a slightly higher series resistance.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2008.2005648</doi><tpages>4</tpages></addata></record> |
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| subjects | Annealing Applied sciences Carbon Clusters Drains Electronics Epitaxial growth Etching Exact sciences and technology Fundamental areas of phenomenology (including applications) Gas lasers including excimer and metal-vapor lasers Implants Laser anneal Lasers Microelectronic fabrication (materials and surfaces technology) molecular carbon MOSFETs Optics Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon silicon carbon solid phase epitaxy (SPE) Solid phases Solids strain Strain control Stress concentration Stress control Throughput Transistors |
| title | N-Channel MOSFETs With Embedded Silicon-Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy |
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