Influence of implantation parameters on the depth distribution of emitting Si-nc

The photoluminescence (PL) spectra of silicon nanocrystals (Si-nc) produced by Si + implantation in SiO 2 are modulated by interference effects associated with the thickness of the SiO 2 layer and the depth where the Si-nc are situated. A model based on the Fresnel equation is used to determine the...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2012-02, Vol.272, p.112-115
Hauptverfasser:	Dahmoune, C., Barba, D., Martin, F., Ross, G.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Beam interactions Density Ellipsometry Emittance Excitation Implantation Ion implantation Light interference Luminescence Mathematical models Rutherford backscattering spectroscopy Si nanocrystals Silicon Silicon dioxide
Online-Zugang:	Volltext
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