Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an hbox Al 2 hbox O 3 Etch-Stop Technology

This letter presents the RF power performance of N-polar AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) grown by metal-organic chemical vapor deposition (MOCVD) on semi-insulating SiC substrates at 10 and 4 GHz. Additionally, an hbox Al 2 hbox O 3 -based etch-s...

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Veröffentlicht in:	IEEE electron device letters 2012-01, Vol.33 (1), p.44-46
Hauptverfasser:	Kolluri, Seshadri, Keller, Stacia, DenBaars, Steven P, Mishra, Umesh K
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Density Devices Etching (metallography) Gallium nitrides Radio frequencies Semiconductor devices Silicon carbide
Online-Zugang:	Volltext
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