Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities
The change of photoluminescence intensities of porous silicon and their morphologies during the etching procedure were investigated. [Display omitted] ► Photoluminescence and surface morphology of porous silicon was investigated. ► The porous silicon prepared with low currents exhibited very stable...
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| Veröffentlicht in: | Microelectronic engineering 2012, Vol.89, p.92-96 |
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| creator | Cho, Bomin Jin, Sunghoon Lee, Bo-Yeon Hwang, Minwoo Kim, Hee-Cheol Sohn, Honglae |
| description | The change of photoluminescence intensities of porous silicon and their morphologies during the etching procedure were investigated.
[Display omitted]
► Photoluminescence and surface morphology of porous silicon was investigated. ► The porous silicon prepared with low currents exhibited very stable and even surface. ► The porous silicon prepared with high displayed the cracked surface of porous silicon. ► The photoluminescence efficiency increased as an etching time increased.
Photoluminescence properties and surface morphologies of porous silicon were investigated by controlling of etching times and applied current densities. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200
mA/cm
2 exhibited very stable and even surface. However the porous silicon prepared at currents above 300
mA/cm
2 displayed the cracked surface of porous silicon. This cracked surface was collapsed to give cracked domains at currents over 500
mA/cm
2. Photoluminescence of porous silicon was investigated by controlling of etching times and applied current densities in the range from 50 to 900
s and from 50 to 800
mA/cm
2, respectively. Photoluminescence intensity of porous silicon increased gradually during etching process, reached maximum, and then decreased as the etching time increased. Porous silicon showed the best photoluminescence efficiency was prepared at currents of 200
mA/cm
2 and etching time of 300
s. |
| doi_str_mv | 10.1016/j.mee.2011.03.145 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1010875446</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931711004047</els_id><sourcerecordid>1010875446</sourcerecordid><originalsourceid>FETCH-LOGICAL-c360t-a59d0c2ec45da8efec5fc13aa6dd284b09240bb38fdddc89d87b539b70b989ba3</originalsourceid><addsrcrecordid>eNp9kEuLFTEQhYMoeB39Ae6yEWbTbdLpRxpXw-BjYMCNrkM6qczUJZ20Se7A3fvDTXsHl66qivpOFecQ8p6zljM-fjy2K0DbMc5bJlreDy_IgctJNMMwypfkUJmpmQWfXpM3OR9ZnXsmD-T3XXiCXPBBF4yBRke3x1iiP60YIBsIBig4hwZre973oSnnDegWUzxlmtGjqcLlTGspKXqP4WHnoJjHvS24QqY6WKq3zSNYak4pQSjUQshYEPJb8sppn-Hdc70iP798_nH7rbn__vXu9ua-MWJkpdHDbJnpwPSD1RIcmMEZLrQere1kv7C569myCOmstUbOVk7LIOZlYsss50WLK3J9ubul-OtUbasVq0fvdYBqRtUkmZyGvh8ryi-oSTHnBE5tCVedzhXauVEdVU1c7YkrJlRNvGo-PJ_X2Wjvkg4G8z9hN4ipm8TOfbpwUL0-ISSV_8YLFhOYomzE_3z5Ax9Omo4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1010875446</pqid></control><display><type>article</type><title>Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Cho, Bomin ; Jin, Sunghoon ; Lee, Bo-Yeon ; Hwang, Minwoo ; Kim, Hee-Cheol ; Sohn, Honglae</creator><creatorcontrib>Cho, Bomin ; Jin, Sunghoon ; Lee, Bo-Yeon ; Hwang, Minwoo ; Kim, Hee-Cheol ; Sohn, Honglae</creatorcontrib><description>The change of photoluminescence intensities of porous silicon and their morphologies during the etching procedure were investigated.
[Display omitted]
► Photoluminescence and surface morphology of porous silicon was investigated. ► The porous silicon prepared with low currents exhibited very stable and even surface. ► The porous silicon prepared with high displayed the cracked surface of porous silicon. ► The photoluminescence efficiency increased as an etching time increased.
Photoluminescence properties and surface morphologies of porous silicon were investigated by controlling of etching times and applied current densities. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200
mA/cm
2 exhibited very stable and even surface. However the porous silicon prepared at currents above 300
mA/cm
2 displayed the cracked surface of porous silicon. This cracked surface was collapsed to give cracked domains at currents over 500
mA/cm
2. Photoluminescence of porous silicon was investigated by controlling of etching times and applied current densities in the range from 50 to 900
s and from 50 to 800
mA/cm
2, respectively. Photoluminescence intensity of porous silicon increased gradually during etching process, reached maximum, and then decreased as the etching time increased. Porous silicon showed the best photoluminescence efficiency was prepared at currents of 200
mA/cm
2 and etching time of 300
s.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2011.03.145</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Control surfaces ; Cross-disciplinary physics: materials science; rheology ; Current density ; Efficiency ; Etching ; Exact sciences and technology ; Iron ; Materials science ; Microelectronics ; Morphology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Photoluminescence ; Physics ; Porous materials; granular materials ; Porous silicon ; Solid surfaces and solid-solid interfaces ; Specific materials ; Surface ; Surface structure and topography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Microelectronic engineering, 2012, Vol.89, p.92-96</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-a59d0c2ec45da8efec5fc13aa6dd284b09240bb38fdddc89d87b539b70b989ba3</citedby><cites>FETCH-LOGICAL-c360t-a59d0c2ec45da8efec5fc13aa6dd284b09240bb38fdddc89d87b539b70b989ba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2011.03.145$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3548,4022,4048,4049,23929,23930,25139,27922,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25372735$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Cho, Bomin</creatorcontrib><creatorcontrib>Jin, Sunghoon</creatorcontrib><creatorcontrib>Lee, Bo-Yeon</creatorcontrib><creatorcontrib>Hwang, Minwoo</creatorcontrib><creatorcontrib>Kim, Hee-Cheol</creatorcontrib><creatorcontrib>Sohn, Honglae</creatorcontrib><title>Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities</title><title>Microelectronic engineering</title><description>The change of photoluminescence intensities of porous silicon and their morphologies during the etching procedure were investigated.
[Display omitted]
► Photoluminescence and surface morphology of porous silicon was investigated. ► The porous silicon prepared with low currents exhibited very stable and even surface. ► The porous silicon prepared with high displayed the cracked surface of porous silicon. ► The photoluminescence efficiency increased as an etching time increased.
Photoluminescence properties and surface morphologies of porous silicon were investigated by controlling of etching times and applied current densities. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200
mA/cm
2 exhibited very stable and even surface. However the porous silicon prepared at currents above 300
mA/cm
2 displayed the cracked surface of porous silicon. This cracked surface was collapsed to give cracked domains at currents over 500
mA/cm
2. Photoluminescence of porous silicon was investigated by controlling of etching times and applied current densities in the range from 50 to 900
s and from 50 to 800
mA/cm
2, respectively. Photoluminescence intensity of porous silicon increased gradually during etching process, reached maximum, and then decreased as the etching time increased. Porous silicon showed the best photoluminescence efficiency was prepared at currents of 200
mA/cm
2 and etching time of 300
s.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Control surfaces</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Current density</subject><subject>Efficiency</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Iron</subject><subject>Materials science</subject><subject>Microelectronics</subject><subject>Morphology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Porous materials; granular materials</subject><subject>Porous silicon</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Specific materials</subject><subject>Surface</subject><subject>Surface structure and topography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kEuLFTEQhYMoeB39Ae6yEWbTbdLpRxpXw-BjYMCNrkM6qczUJZ20Se7A3fvDTXsHl66qivpOFecQ8p6zljM-fjy2K0DbMc5bJlreDy_IgctJNMMwypfkUJmpmQWfXpM3OR9ZnXsmD-T3XXiCXPBBF4yBRke3x1iiP60YIBsIBig4hwZre973oSnnDegWUzxlmtGjqcLlTGspKXqP4WHnoJjHvS24QqY6WKq3zSNYak4pQSjUQshYEPJb8sppn-Hdc70iP798_nH7rbn__vXu9ua-MWJkpdHDbJnpwPSD1RIcmMEZLrQere1kv7C569myCOmstUbOVk7LIOZlYsss50WLK3J9ubul-OtUbasVq0fvdYBqRtUkmZyGvh8ryi-oSTHnBE5tCVedzhXauVEdVU1c7YkrJlRNvGo-PJ_X2Wjvkg4G8z9hN4ipm8TOfbpwUL0-ISSV_8YLFhOYomzE_3z5Ax9Omo4</recordid><startdate>2012</startdate><enddate>2012</enddate><creator>Cho, Bomin</creator><creator>Jin, Sunghoon</creator><creator>Lee, Bo-Yeon</creator><creator>Hwang, Minwoo</creator><creator>Kim, Hee-Cheol</creator><creator>Sohn, Honglae</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2012</creationdate><title>Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities</title><author>Cho, Bomin ; Jin, Sunghoon ; Lee, Bo-Yeon ; Hwang, Minwoo ; Kim, Hee-Cheol ; Sohn, Honglae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-a59d0c2ec45da8efec5fc13aa6dd284b09240bb38fdddc89d87b539b70b989ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Control surfaces</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Current density</topic><topic>Efficiency</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Iron</topic><topic>Materials science</topic><topic>Microelectronics</topic><topic>Morphology</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Porous materials; granular materials</topic><topic>Porous silicon</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Specific materials</topic><topic>Surface</topic><topic>Surface structure and topography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cho, Bomin</creatorcontrib><creatorcontrib>Jin, Sunghoon</creatorcontrib><creatorcontrib>Lee, Bo-Yeon</creatorcontrib><creatorcontrib>Hwang, Minwoo</creatorcontrib><creatorcontrib>Kim, Hee-Cheol</creatorcontrib><creatorcontrib>Sohn, Honglae</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cho, Bomin</au><au>Jin, Sunghoon</au><au>Lee, Bo-Yeon</au><au>Hwang, Minwoo</au><au>Kim, Hee-Cheol</au><au>Sohn, Honglae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities</atitle><jtitle>Microelectronic engineering</jtitle><date>2012</date><risdate>2012</risdate><volume>89</volume><spage>92</spage><epage>96</epage><pages>92-96</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>The change of photoluminescence intensities of porous silicon and their morphologies during the etching procedure were investigated.
[Display omitted]
► Photoluminescence and surface morphology of porous silicon was investigated. ► The porous silicon prepared with low currents exhibited very stable and even surface. ► The porous silicon prepared with high displayed the cracked surface of porous silicon. ► The photoluminescence efficiency increased as an etching time increased.
Photoluminescence properties and surface morphologies of porous silicon were investigated by controlling of etching times and applied current densities. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200
mA/cm
2 exhibited very stable and even surface. However the porous silicon prepared at currents above 300
mA/cm
2 displayed the cracked surface of porous silicon. This cracked surface was collapsed to give cracked domains at currents over 500
mA/cm
2. Photoluminescence of porous silicon was investigated by controlling of etching times and applied current densities in the range from 50 to 900
s and from 50 to 800
mA/cm
2, respectively. Photoluminescence intensity of porous silicon increased gradually during etching process, reached maximum, and then decreased as the etching time increased. Porous silicon showed the best photoluminescence efficiency was prepared at currents of 200
mA/cm
2 and etching time of 300
s.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2011.03.145</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2012, Vol.89, p.92-96 |
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| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Control surfaces Cross-disciplinary physics: materials science rheology Current density Efficiency Etching Exact sciences and technology Iron Materials science Microelectronics Morphology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Photoluminescence Physics Porous materials granular materials Porous silicon Solid surfaces and solid-solid interfaces Specific materials Surface Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities |
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