Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

► Ir/n-Ge (1 0 0) Schottky diodes were characterized using I– V, C– V and SEM techniques under various annealing conditions. ► The variation of the electrical and structural properties can be due to effects phase transformation during annealing. ► Thermal stability of these diodes is maintained up t...

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Veröffentlicht in:	Journal of alloys and compounds 2012-02, Vol.513, p.44-49
Hauptverfasser:	Chawanda, A., Coelho, S.M.M., Auret, F.D., Mtangi, W., Nyamhere, C., Nel, J.M., Diale, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Agglomeration Annealing Barriers Condensed matter: electronic structure, electrical, magnetic, and optical properties Deposition Diodes Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Germanium Ideality factor Interface reactions Iridium Physics Scanning electron microscopy Schottky contact Surface double layers, schottky barriers, and work functions Volt-ampere characteristics
Online-Zugang:	Volltext
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