The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD

We have investigated the influence of assisted ion beam bombardment on structure and electrical properties of HfSiO dielectrics deposited on Si (1 0 0) substrate by dual-ion beam sputtering deposition (DIBSD). The X-ray photoelectron spectroscopy (XPS) analysis indicates that assisted ion beam bomba...

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Veröffentlicht in:	Microelectronics and reliability 2011-12, Vol.51 (12), p.2115-2118
Hauptverfasser:	Yang, X.M., Zhuge, L.J., Wu, X.M., Yu, T., Ge, S.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bombardment Cross-disciplinary physics: materials science rheology Density Deposition Electrical properties Exact sciences and technology Ion and electron beam-assisted deposition ion plating Ion beams Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Silicon substrates Surface chemistry X-ray photoelectron spectroscopy
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