Stackable nonvolatile memory with ultra thin polysilicon film and low-leakage (Ti, Dy) sub(xO) sub(y) for low processing temperature and low operating voltages

We report the fabrication process as well as material and electrical characterization of ultra thin body (UTB) thin film transistors (TFTs) for stackable nonvolatile memories by using in situ phosphorous doped low-temperature polysilicon followed by the chemical mechanical polishing (CMP) process. T...

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Veröffentlicht in:	Microelectronic engineering 2011-12, Vol.88 (12), p.3462-3465
Hauptverfasser:	Lee, Jaegoo, Cha, Judy J, Barron, Sara, Muller, David A, Van Dover, RBruce, Amponsah, Ebenezer K, Hou, Tuo-Hung, Raza, Hassan, Kan, Edwin C
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric potential Electron energy loss spectroscopy Nanocrystals Scanning transmission electron microscopy Semiconductor devices Thin film transistors Titanium Voltage
Online-Zugang:	Volltext
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