Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining
Plastic prestraining was applied to a solder interconnect to introduce internal defects such as dislocations in order to investigate the interaction of dislocations with electromigration damage. Above a critical prestrain, Bi interfacial segregation to the anode, a clear indication of electromigrati...
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Veröffentlicht in: | Journal of materials science & technology 2011-11, Vol.27 (11), p.1072-1076 |
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container_title | Journal of materials science & technology |
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creator | Zhang, X.F. Liu, H.Y. Guo, J.D. Shang, J.K. |
description | Plastic prestraining was applied to a solder interconnect to introduce internal defects such as dislocations in order to investigate the interaction of dislocations with electromigration damage. Above a critical prestrain, Bi interfacial segregation to the anode, a clear indication of electromigration damage in SnBi solder inter- connect, was effectively prevented. Such an inhibiting effect is apparently contrary to the common notion that dislocations often act as fast diffusion paths. It is suggested that the dislocations introduced by plastic prestraining acted as sinks for vacancies in the early stage of the electromigration process, but as the vacancies accumulated at the dislocations, climb of those dislocations prompted recovery of the deformed samples under current stressing, greatly decreasing the density of dislocation and vacancy in the solder, leading to slower diffusion of Bi atoms. |
doi_str_mv | 10.1016/S1005-0302(11)60188-6 |
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Above a critical prestrain, Bi interfacial segregation to the anode, a clear indication of electromigration damage in SnBi solder inter- connect, was effectively prevented. Such an inhibiting effect is apparently contrary to the common notion that dislocations often act as fast diffusion paths. It is suggested that the dislocations introduced by plastic prestraining acted as sinks for vacancies in the early stage of the electromigration process, but as the vacancies accumulated at the dislocations, climb of those dislocations prompted recovery of the deformed samples under current stressing, greatly decreasing the density of dislocation and vacancy in the solder, leading to slower diffusion of Bi atoms.</description><identifier>ISSN: 1005-0302</identifier><identifier>EISSN: 1941-1162</identifier><identifier>DOI: 10.1016/S1005-0302(11)60188-6</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Damage ; Diffusion ; Diffusion rate ; Dislocation ; Dislocations ; Electromigration ; Interfacial segregation ; Prestrain ; Prestraining ; Solders ; Vacancies ; Vacancy</subject><ispartof>Journal of materials science & technology, 2011-11, Vol.27 (11), p.1072-1076</ispartof><rights>2011 The Chinese Society for Metals</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-5ed8a6fbaf274ec44a552dc7db4f748bc61269bc64edcb7262e92398be94576a3</citedby><cites>FETCH-LOGICAL-c368t-5ed8a6fbaf274ec44a552dc7db4f748bc61269bc64edcb7262e92398be94576a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84252X/84252X.jpg</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S1005-0302(11)60188-6$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Zhang, X.F.</creatorcontrib><creatorcontrib>Liu, H.Y.</creatorcontrib><creatorcontrib>Guo, J.D.</creatorcontrib><creatorcontrib>Shang, J.K.</creatorcontrib><title>Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining</title><title>Journal of materials science & technology</title><addtitle>Journal of Materials Science & Technology</addtitle><description>Plastic prestraining was applied to a solder interconnect to introduce internal defects such as dislocations in order to investigate the interaction of dislocations with electromigration damage. Above a critical prestrain, Bi interfacial segregation to the anode, a clear indication of electromigration damage in SnBi solder inter- connect, was effectively prevented. Such an inhibiting effect is apparently contrary to the common notion that dislocations often act as fast diffusion paths. It is suggested that the dislocations introduced by plastic prestraining acted as sinks for vacancies in the early stage of the electromigration process, but as the vacancies accumulated at the dislocations, climb of those dislocations prompted recovery of the deformed samples under current stressing, greatly decreasing the density of dislocation and vacancy in the solder, leading to slower diffusion of Bi atoms.</description><subject>Damage</subject><subject>Diffusion</subject><subject>Diffusion rate</subject><subject>Dislocation</subject><subject>Dislocations</subject><subject>Electromigration</subject><subject>Interfacial segregation</subject><subject>Prestrain</subject><subject>Prestraining</subject><subject>Solders</subject><subject>Vacancies</subject><subject>Vacancy</subject><issn>1005-0302</issn><issn>1941-1162</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkMFKAzEQhhdRUKuPIKw3Paxmstls9iRaqhYKFqonDyGbnW0j28QmW6Fvb9qqV08TJt_Mz3xJcgHkBgjw2xkQUmQkJ_QK4JoTECLjB8kJVAwyAE4P4_sXOU5OQ_ggJC8LIU6S97FdmNr0xtnUtemoQ917tzRzr3Y9Y9PRuo9No9OZfTDpzHUN-nRse_TaWRu_0nqTTjsVtszUY-i9MtbY-Vly1Kou4PlPHSRvj6PX4XM2eXkaD-8nmc656LMCG6F4W6uWlgw1Y6ooaKPLpmZtyUStOVBexcKw0XVJOcWK5pWosWJFyVU-SK72ez-9W61jvlyaoLHrlEW3DjLeXgmoBIWIFntUexeCx1Z-erNUfhMhuZUpdzLl1pQEkDuZkse5u_0cxju-DHoZtEGrsTE-GpCNM_9uuPxJXjg7X0U9f9EsIgUDmn8DZt-H-Q</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>Zhang, X.F.</creator><creator>Liu, H.Y.</creator><creator>Guo, J.D.</creator><creator>Shang, J.K.</creator><general>Elsevier Ltd</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20111101</creationdate><title>Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining</title><author>Zhang, X.F. ; Liu, H.Y. ; Guo, J.D. ; Shang, J.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-5ed8a6fbaf274ec44a552dc7db4f748bc61269bc64edcb7262e92398be94576a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Damage</topic><topic>Diffusion</topic><topic>Diffusion rate</topic><topic>Dislocation</topic><topic>Dislocations</topic><topic>Electromigration</topic><topic>Interfacial segregation</topic><topic>Prestrain</topic><topic>Prestraining</topic><topic>Solders</topic><topic>Vacancies</topic><topic>Vacancy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, X.F.</creatorcontrib><creatorcontrib>Liu, H.Y.</creatorcontrib><creatorcontrib>Guo, J.D.</creatorcontrib><creatorcontrib>Shang, J.K.</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials science & technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, X.F.</au><au>Liu, H.Y.</au><au>Guo, J.D.</au><au>Shang, J.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining</atitle><jtitle>Journal of materials science & technology</jtitle><addtitle>Journal of Materials Science & Technology</addtitle><date>2011-11-01</date><risdate>2011</risdate><volume>27</volume><issue>11</issue><spage>1072</spage><epage>1076</epage><pages>1072-1076</pages><issn>1005-0302</issn><eissn>1941-1162</eissn><abstract>Plastic prestraining was applied to a solder interconnect to introduce internal defects such as dislocations in order to investigate the interaction of dislocations with electromigration damage. Above a critical prestrain, Bi interfacial segregation to the anode, a clear indication of electromigration damage in SnBi solder inter- connect, was effectively prevented. Such an inhibiting effect is apparently contrary to the common notion that dislocations often act as fast diffusion paths. It is suggested that the dislocations introduced by plastic prestraining acted as sinks for vacancies in the early stage of the electromigration process, but as the vacancies accumulated at the dislocations, climb of those dislocations prompted recovery of the deformed samples under current stressing, greatly decreasing the density of dislocation and vacancy in the solder, leading to slower diffusion of Bi atoms.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S1005-0302(11)60188-6</doi><tpages>5</tpages></addata></record> |
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subjects | Damage Diffusion Diffusion rate Dislocation Dislocations Electromigration Interfacial segregation Prestrain Prestraining Solders Vacancies Vacancy |
title | Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining |
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