Metamorphic In0.53Ga0.47As/In0.52Al0.48 As HEMTs on germanium substrates

Metamorphic In0.53Ga0.47As/In0.52Al0.48 As HEMTs on germanium substrates

Devices with 0.2 μm gate length display an increase of the extrinsic cut-off frequency fT from 45 GHz before, to 75 GHz after substrate removal, whereas the maximum oscillation frequency fmax increases from 68 GHz to 95 GHz.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2000-02, Vol.21 (2), p.57
Hauptverfasser: van der Zanden, K, Schreurs, D, Mijlemans, P, Borghs, G
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Devices with 0.2 μm gate length display an increase of the extrinsic cut-off frequency fT from 45 GHz before, to 75 GHz after substrate removal, whereas the maximum oscillation frequency fmax increases from 68 GHz to 95 GHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.821666