Manufacturable GaAs VFET for power switching applications
We have developed a manufacturable process to fabricate high performance GaAs vertical field effect transistors (VFET's). Our process uses ion implantation to form the gate as opposed to previous VFET processes, which used epitaxial regrowth or angled evaporation. In this process, trenches 1.2...
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| Veröffentlicht in: | IEEE electron device letters 2000-04, Vol.21 (4), p.144-145 |
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| container_title | IEEE electron device letters |
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| creator | Eisenbeiser, K. Jenn-Hwa Huang Salih, A. Hadizad, P. Pitts, B. |
| description | We have developed a manufacturable process to fabricate high performance GaAs vertical field effect transistors (VFET's). Our process uses ion implantation to form the gate as opposed to previous VFET processes, which used epitaxial regrowth or angled evaporation. In this process, trenches 1.2 μm wide by 0.6 μm deep with a period of 2.4 μm are formed by reactive ion etch (RIE) then the gate region is formed at the bottom of the trench by Ar/C ion co-implantation. Current handling capability of these devices exceeds 200 A/cm 2 with a specific on-resistance of 0.25 m/spl Omega/-cm 2 and calculated delay times of 13.9 ps. |
| doi_str_mv | 10.1109/55.830962 |
| format | Article |
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Our process uses ion implantation to form the gate as opposed to previous VFET processes, which used epitaxial regrowth or angled evaporation. In this process, trenches 1.2 μm wide by 0.6 μm deep with a period of 2.4 μm are formed by reactive ion etch (RIE) then the gate region is formed at the bottom of the trench by Ar/C ion co-implantation. Current handling capability of these devices exceeds 200 A/cm 2 with a specific on-resistance of 0.25 m/spl Omega/-cm 2 and calculated delay times of 13.9 ps.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.830962</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Argon ; Costs ; Delay ; Devices ; Epitaxial growth ; Etching ; Evaporation ; FETs ; Gallium arsenide ; Gallium arsenides ; Gates ; Laboratories ; Manufacturing ; Mathematical analysis ; Resists ; Switches ; Trenches</subject><ispartof>IEEE electron device letters, 2000-04, Vol.21 (4), p.144-145</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Current handling capability of these devices exceeds 200 A/cm 2 with a specific on-resistance of 0.25 m/spl Omega/-cm 2 and calculated delay times of 13.9 ps.</description><subject>Argon</subject><subject>Costs</subject><subject>Delay</subject><subject>Devices</subject><subject>Epitaxial growth</subject><subject>Etching</subject><subject>Evaporation</subject><subject>FETs</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Gates</subject><subject>Laboratories</subject><subject>Manufacturing</subject><subject>Mathematical analysis</subject><subject>Resists</subject><subject>Switches</subject><subject>Trenches</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0T1PwzAQBmALgUQpDKxMEQOIIeXOX4nHqoKCBGIBVst1bUiVJsFOVPHvSZWKgQGYbrjnXp3uCDlFmCCCuhZikjNQku6REQqRpyAk2ycjyDimDEEekqMYVwDIecZHRD2aqvPGtl0wi9IlczONyevtzXPi65A09caFJG6K1r4X1VtimqYsrGmLuorH5MCbMrqTXR2Tl35sdpc-PM3vZ9OH1DJkbaq85dZI5xGdokshOKBx3hu0sKDLnIPIcsa4M14AR7_st14ip8iA-lwCG5PLIbcJ9UfnYqvXRbSuLE3l6i5qhVwKzCjt5cWvkuaKS1D8H5DlMpPib5gJxZRUPTz_AVd1F6r-LlopRfsotd3vakA21DEG53UTirUJnxpBb7-nhdDD93p7NtjCOfftds0v-niRiw</recordid><startdate>200004</startdate><enddate>200004</enddate><creator>Eisenbeiser, K.</creator><creator>Jenn-Hwa Huang</creator><creator>Salih, A.</creator><creator>Hadizad, P.</creator><creator>Pitts, B.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2000-04, Vol.21 (4), p.144-145 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Argon Costs Delay Devices Epitaxial growth Etching Evaporation FETs Gallium arsenide Gallium arsenides Gates Laboratories Manufacturing Mathematical analysis Resists Switches Trenches |
| title | Manufacturable GaAs VFET for power switching applications |
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