Design methodology of embedded DRAM with virtual-socket architecture
This paper proposes the virtual-socket architecture in order to reduce the design turn-around time (TAT) of the embedded DRAM. The required memory density and the function of the embedded DRAM are system dependent. In the conventional design, the DRAM control circuitry with the DRAM memory array is...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2001-01, Vol.36 (1), p.46-54 |
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container_title | IEEE journal of solid-state circuits |
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creator | Yamauchi, T. Kinoshita, M. Amano, T. Dosaka, K. Arimoto, K. Ozaki, H. Yamada, M. Yoshihara, T. |
description | This paper proposes the virtual-socket architecture in order to reduce the design turn-around time (TAT) of the embedded DRAM. The required memory density and the function of the embedded DRAM are system dependent. In the conventional design, the DRAM control circuitry with the DRAM memory array is handled as a hardware macro, resulting in the increase in design TAT. On the other hand, our proposed architecture provides the DRAM control circuitry as a software macro to take advantage of the automated tools based on synchronous circuit design. With array-generator technology, this architecture can achieve high quality and quick turn-around time (QTAT) of flexible embedded DRAM that is almost the same as the CMOS ASIC. We applied this virtual-socket architecture to the development of the 61-Mb synchronous DRAM core using 0.18-/spl mu/m design rule and confirmed the high-speed operation, 166 MHz at CAS latency of two, and 180 MHz at that of three. The experimental results show that our proposed architecture can be applied to the development of the high-performance embedded DRAM with design QTAT. |
doi_str_mv | 10.1109/4.896228 |
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The required memory density and the function of the embedded DRAM are system dependent. In the conventional design, the DRAM control circuitry with the DRAM memory array is handled as a hardware macro, resulting in the increase in design TAT. On the other hand, our proposed architecture provides the DRAM control circuitry as a software macro to take advantage of the automated tools based on synchronous circuit design. With array-generator technology, this architecture can achieve high quality and quick turn-around time (QTAT) of flexible embedded DRAM that is almost the same as the CMOS ASIC. We applied this virtual-socket architecture to the development of the 61-Mb synchronous DRAM core using 0.18-/spl mu/m design rule and confirmed the high-speed operation, 166 MHz at CAS latency of two, and 180 MHz at that of three. 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The required memory density and the function of the embedded DRAM are system dependent. In the conventional design, the DRAM control circuitry with the DRAM memory array is handled as a hardware macro, resulting in the increase in design TAT. On the other hand, our proposed architecture provides the DRAM control circuitry as a software macro to take advantage of the automated tools based on synchronous circuit design. With array-generator technology, this architecture can achieve high quality and quick turn-around time (QTAT) of flexible embedded DRAM that is almost the same as the CMOS ASIC. We applied this virtual-socket architecture to the development of the 61-Mb synchronous DRAM core using 0.18-/spl mu/m design rule and confirmed the high-speed operation, 166 MHz at CAS latency of two, and 180 MHz at that of three. The experimental results show that our proposed architecture can be applied to the development of the high-performance embedded DRAM with design QTAT.</description><subject>Application specific integrated circuits</subject><subject>Architecture</subject><subject>Automatic control</subject><subject>Circuit design</subject><subject>Circuit synthesis</subject><subject>CMOS technology</subject><subject>Computer architecture</subject><subject>Computer memory</subject><subject>Computer programs</subject><subject>Content addressable storage</subject><subject>Density</subject><subject>Design engineering</subject><subject>Design methodology</subject><subject>Dynamic random access memory</subject><subject>Electric circuits</subject><subject>Hardware</subject><subject>Microprocessors</subject><subject>Random access memory</subject><subject>Software tools</subject><subject>Synchronous</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0c9LwzAUB_AgCs4pePZUPKiXziRN0uQ4Nn-BIoiCt5Kkr1tnt8wkVfbfW-nw4EFPj8f78IXHF6FjgkeEYHXJRlIJSuUOGhDOZUry7HUXDTAmMlUU4310EMKiWxmTZICmUwj1bJUsIc5d6Ro32ySuSmBpoCyhTKZP44fks47z5KP2sdVNGpx9g5hob-d1BBtbD4dor9JNgKPtHKKX66vnyW16_3hzNxnfpzajIqYaM2U4pSXjGUiruZGamjy3XFJqlCFAhZKADTOVqiqloawMJaXFimFBWDZE533u2rv3FkIslnWw0DR6Ba4NhSJMsExw2smzPyWVlDPJsv-hECrDTHTw9BdcuNavuncLpQSTuaC4Qxc9st6F4KEq1r5ear8pCC6-6ylY0dfT0ZOe1gDww7bHL1J-iNc</recordid><startdate>200101</startdate><enddate>200101</enddate><creator>Yamauchi, T.</creator><creator>Kinoshita, M.</creator><creator>Amano, T.</creator><creator>Dosaka, K.</creator><creator>Arimoto, K.</creator><creator>Ozaki, H.</creator><creator>Yamada, M.</creator><creator>Yoshihara, T.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The required memory density and the function of the embedded DRAM are system dependent. In the conventional design, the DRAM control circuitry with the DRAM memory array is handled as a hardware macro, resulting in the increase in design TAT. On the other hand, our proposed architecture provides the DRAM control circuitry as a software macro to take advantage of the automated tools based on synchronous circuit design. With array-generator technology, this architecture can achieve high quality and quick turn-around time (QTAT) of flexible embedded DRAM that is almost the same as the CMOS ASIC. We applied this virtual-socket architecture to the development of the 61-Mb synchronous DRAM core using 0.18-/spl mu/m design rule and confirmed the high-speed operation, 166 MHz at CAS latency of two, and 180 MHz at that of three. The experimental results show that our proposed architecture can be applied to the development of the high-performance embedded DRAM with design QTAT.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/4.896228</doi><tpages>9</tpages></addata></record> |
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subjects | Application specific integrated circuits Architecture Automatic control Circuit design Circuit synthesis CMOS technology Computer architecture Computer memory Computer programs Content addressable storage Density Design engineering Design methodology Dynamic random access memory Electric circuits Hardware Microprocessors Random access memory Software tools Synchronous |
title | Design methodology of embedded DRAM with virtual-socket architecture |
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