Fabrication of interface elements for oxide RSFQ circuits

RSFQ circuit elements were fabricated based on the YBa/sub 2/Cu/sub 3/O/sub 7-x/ ramp-edge junctions and their characteristics were investigated. In particular, two types of interface circuits were designed, fabricated and their amplification functions were evaluated. The interface circuits comprise...

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Veröffentlicht in:IEEE transactions on applied superconductivity 2003-06, Vol.13 (2), p.413-416
Hauptverfasser: Tarutani, Y., Ishimaru, Y., Wakana, H., Horibe, M., Sugiyama, H., Adachi, S., Oshikubo, Y., Horibe, O., Suzuki, T., Tanabe, K., Kawabe, U.
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container_issue 2
container_start_page 413
container_title IEEE transactions on applied superconductivity
container_volume 13
creator Tarutani, Y.
Ishimaru, Y.
Wakana, H.
Horibe, M.
Sugiyama, H.
Adachi, S.
Oshikubo, Y.
Horibe, O.
Suzuki, T.
Tanabe, K.
Kawabe, U.
description RSFQ circuit elements were fabricated based on the YBa/sub 2/Cu/sub 3/O/sub 7-x/ ramp-edge junctions and their characteristics were investigated. In particular, two types of interface circuits were designed, fabricated and their amplification functions were evaluated. The interface circuits comprised series array of SQUID's that shared a common inductor each other. Each SQUID was switched between zero voltage state and voltage state by current injection. Input signal was AC Josephson current for the type-one interface circuit. The input signal was an SFQ for the type-two interface circuit. Both interface circuits could successfully be operated. In particular, an output voltage more than 1 mV was obtained for the type-one interface circuit that comprised the stack of five SQUID's.
doi_str_mv 10.1109/TASC.2003.813882
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_922280594</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1211629</ieee_id><sourcerecordid>28250139</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-6fb03c8baf507d5b47c9df4f1e27a90f1238dd40a47a8c0610e2a4b0380e57603</originalsourceid><addsrcrecordid>eNpdkE1Lw0AQhoMoWKt3wUsQ9JY6-9XsHkuxKhREW8_LZjMLW9Kk7iag_96EFAqeZmCe92V4kuSWwIwQUE_bxWY5owBsJgmTkp4lEyKEzKgg4rzfQZBMUsouk6sYdwCESy4miVqZInhrWt_UaeNSX7cYnLGYYoV7rNuYuiakzY8vMf3crD5S64PtfBuvkwtnqog3xzlNvlbP2-Vrtn5_eVsu1pllXLXZ3BXArCyME5CXouC5VaXjjiDNjQJHKJNlycHw3EgLcwJIDe8zElDkc2DT5HHsPYTmu8PY6r2PFqvK1Nh0UVNJBRCmevD-H7hrulD3v2lFKZUgFO8hGCEbmhgDOn0Ifm_CryagB5F6EKkHkXoU2Ucejr0mWlO5YGrr4yknhGAchuq7kfOIeDpTQuZUsT8g4nnV</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>922280594</pqid></control><display><type>article</type><title>Fabrication of interface elements for oxide RSFQ circuits</title><source>IEEE Electronic Library (IEL)</source><creator>Tarutani, Y. ; Ishimaru, Y. ; Wakana, H. ; Horibe, M. ; Sugiyama, H. ; Adachi, S. ; Oshikubo, Y. ; Horibe, O. ; Suzuki, T. ; Tanabe, K. ; Kawabe, U.</creator><creatorcontrib>Tarutani, Y. ; Ishimaru, Y. ; Wakana, H. ; Horibe, M. ; Sugiyama, H. ; Adachi, S. ; Oshikubo, Y. ; Horibe, O. ; Suzuki, T. ; Tanabe, K. ; Kawabe, U.</creatorcontrib><description>RSFQ circuit elements were fabricated based on the YBa/sub 2/Cu/sub 3/O/sub 7-x/ ramp-edge junctions and their characteristics were investigated. In particular, two types of interface circuits were designed, fabricated and their amplification functions were evaluated. The interface circuits comprised series array of SQUID's that shared a common inductor each other. Each SQUID was switched between zero voltage state and voltage state by current injection. Input signal was AC Josephson current for the type-one interface circuit. The input signal was an SFQ for the type-two interface circuit. Both interface circuits could successfully be operated. In particular, an output voltage more than 1 mV was obtained for the type-one interface circuit that comprised the stack of five SQUID's.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2003.813882</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electrical engineering. Electrical power engineering ; Electrodes ; Electronics ; Exact sciences and technology ; Fabrication ; Frequency estimation ; Integrated circuits ; Josephson effect ; Magnetic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SQUIDs ; Substrates ; Superconducting devices ; Superconductivity ; Thin film circuits ; Transformers and inductors ; Wiring ; Zero voltage switching</subject><ispartof>IEEE transactions on applied superconductivity, 2003-06, Vol.13 (2), p.413-416</ispartof><rights>2004 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-6fb03c8baf507d5b47c9df4f1e27a90f1238dd40a47a8c0610e2a4b0380e57603</citedby><cites>FETCH-LOGICAL-c349t-6fb03c8baf507d5b47c9df4f1e27a90f1238dd40a47a8c0610e2a4b0380e57603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1211629$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,797,23935,23936,25145,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1211629$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=15553404$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tarutani, Y.</creatorcontrib><creatorcontrib>Ishimaru, Y.</creatorcontrib><creatorcontrib>Wakana, H.</creatorcontrib><creatorcontrib>Horibe, M.</creatorcontrib><creatorcontrib>Sugiyama, H.</creatorcontrib><creatorcontrib>Adachi, S.</creatorcontrib><creatorcontrib>Oshikubo, Y.</creatorcontrib><creatorcontrib>Horibe, O.</creatorcontrib><creatorcontrib>Suzuki, T.</creatorcontrib><creatorcontrib>Tanabe, K.</creatorcontrib><creatorcontrib>Kawabe, U.</creatorcontrib><title>Fabrication of interface elements for oxide RSFQ circuits</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>RSFQ circuit elements were fabricated based on the YBa/sub 2/Cu/sub 3/O/sub 7-x/ ramp-edge junctions and their characteristics were investigated. In particular, two types of interface circuits were designed, fabricated and their amplification functions were evaluated. The interface circuits comprised series array of SQUID's that shared a common inductor each other. Each SQUID was switched between zero voltage state and voltage state by current injection. Input signal was AC Josephson current for the type-one interface circuit. The input signal was an SFQ for the type-two interface circuit. Both interface circuits could successfully be operated. In particular, an output voltage more than 1 mV was obtained for the type-one interface circuit that comprised the stack of five SQUID's.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Frequency estimation</subject><subject>Integrated circuits</subject><subject>Josephson effect</subject><subject>Magnetic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SQUIDs</subject><subject>Substrates</subject><subject>Superconducting devices</subject><subject>Superconductivity</subject><subject>Thin film circuits</subject><subject>Transformers and inductors</subject><subject>Wiring</subject><subject>Zero voltage switching</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhoMoWKt3wUsQ9JY6-9XsHkuxKhREW8_LZjMLW9Kk7iag_96EFAqeZmCe92V4kuSWwIwQUE_bxWY5owBsJgmTkp4lEyKEzKgg4rzfQZBMUsouk6sYdwCESy4miVqZInhrWt_UaeNSX7cYnLGYYoV7rNuYuiakzY8vMf3crD5S64PtfBuvkwtnqog3xzlNvlbP2-Vrtn5_eVsu1pllXLXZ3BXArCyME5CXouC5VaXjjiDNjQJHKJNlycHw3EgLcwJIDe8zElDkc2DT5HHsPYTmu8PY6r2PFqvK1Nh0UVNJBRCmevD-H7hrulD3v2lFKZUgFO8hGCEbmhgDOn0Ifm_CryagB5F6EKkHkXoU2Ucejr0mWlO5YGrr4yknhGAchuq7kfOIeDpTQuZUsT8g4nnV</recordid><startdate>20030601</startdate><enddate>20030601</enddate><creator>Tarutani, Y.</creator><creator>Ishimaru, Y.</creator><creator>Wakana, H.</creator><creator>Horibe, M.</creator><creator>Sugiyama, H.</creator><creator>Adachi, S.</creator><creator>Oshikubo, Y.</creator><creator>Horibe, O.</creator><creator>Suzuki, T.</creator><creator>Tanabe, K.</creator><creator>Kawabe, U.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030601</creationdate><title>Fabrication of interface elements for oxide RSFQ circuits</title><author>Tarutani, Y. ; Ishimaru, Y. ; Wakana, H. ; Horibe, M. ; Sugiyama, H. ; Adachi, S. ; Oshikubo, Y. ; Horibe, O. ; Suzuki, T. ; Tanabe, K. ; Kawabe, U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-6fb03c8baf507d5b47c9df4f1e27a90f1238dd40a47a8c0610e2a4b0380e57603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Frequency estimation</topic><topic>Integrated circuits</topic><topic>Josephson effect</topic><topic>Magnetic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SQUIDs</topic><topic>Substrates</topic><topic>Superconducting devices</topic><topic>Superconductivity</topic><topic>Thin film circuits</topic><topic>Transformers and inductors</topic><topic>Wiring</topic><topic>Zero voltage switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tarutani, Y.</creatorcontrib><creatorcontrib>Ishimaru, Y.</creatorcontrib><creatorcontrib>Wakana, H.</creatorcontrib><creatorcontrib>Horibe, M.</creatorcontrib><creatorcontrib>Sugiyama, H.</creatorcontrib><creatorcontrib>Adachi, S.</creatorcontrib><creatorcontrib>Oshikubo, Y.</creatorcontrib><creatorcontrib>Horibe, O.</creatorcontrib><creatorcontrib>Suzuki, T.</creatorcontrib><creatorcontrib>Tanabe, K.</creatorcontrib><creatorcontrib>Kawabe, U.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tarutani, Y.</au><au>Ishimaru, Y.</au><au>Wakana, H.</au><au>Horibe, M.</au><au>Sugiyama, H.</au><au>Adachi, S.</au><au>Oshikubo, Y.</au><au>Horibe, O.</au><au>Suzuki, T.</au><au>Tanabe, K.</au><au>Kawabe, U.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of interface elements for oxide RSFQ circuits</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2003-06-01</date><risdate>2003</risdate><volume>13</volume><issue>2</issue><spage>413</spage><epage>416</epage><pages>413-416</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>RSFQ circuit elements were fabricated based on the YBa/sub 2/Cu/sub 3/O/sub 7-x/ ramp-edge junctions and their characteristics were investigated. In particular, two types of interface circuits were designed, fabricated and their amplification functions were evaluated. The interface circuits comprised series array of SQUID's that shared a common inductor each other. Each SQUID was switched between zero voltage state and voltage state by current injection. Input signal was AC Josephson current for the type-one interface circuit. The input signal was an SFQ for the type-two interface circuit. Both interface circuits could successfully be operated. In particular, an output voltage more than 1 mV was obtained for the type-one interface circuit that comprised the stack of five SQUID's.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TASC.2003.813882</doi><tpages>4</tpages></addata></record>
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subjects Applied sciences
Design. Technologies. Operation analysis. Testing
Electrical engineering. Electrical power engineering
Electrodes
Electronics
Exact sciences and technology
Fabrication
Frequency estimation
Integrated circuits
Josephson effect
Magnetic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SQUIDs
Substrates
Superconducting devices
Superconductivity
Thin film circuits
Transformers and inductors
Wiring
Zero voltage switching
title Fabrication of interface elements for oxide RSFQ circuits
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T20%3A44%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20of%20interface%20elements%20for%20oxide%20RSFQ%20circuits&rft.jtitle=IEEE%20transactions%20on%20applied%20superconductivity&rft.au=Tarutani,%20Y.&rft.date=2003-06-01&rft.volume=13&rft.issue=2&rft.spage=413&rft.epage=416&rft.pages=413-416&rft.issn=1051-8223&rft.eissn=1558-2515&rft.coden=ITASE9&rft_id=info:doi/10.1109/TASC.2003.813882&rft_dat=%3Cproquest_RIE%3E28250139%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=922280594&rft_id=info:pmid/&rft_ieee_id=1211629&rfr_iscdi=true