Texture and surface analysis of NiO buffer deposited on biaxially textured Ni tapes by a MOCVD method
NiO buffer layers for YBCO coated conductors were deposited on textured Ni substrates by a metal-organic chemical vapor deposition(MOCVD) method. Processing variables were the oxygen partial pressure and substrate temperature. The degree of texture and the surface roughness of the deposited NiO surf...
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| Veröffentlicht in: | IEEE transactions on applied superconductivity 2003-06, Vol.13 (2), p.2539-2542 |
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| container_title | IEEE transactions on applied superconductivity |
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| creator | SUN, Jong-Won HYUNG SEOP KIM BONG KI JI PARK, Hai-Woong HONG, Gye-Won JUNG, Choong-Hwan PARK, Soon-Dong JUN, Byung-Hyuk KIM, Chan-Joong |
| description | NiO buffer layers for YBCO coated conductors were deposited on textured Ni substrates by a metal-organic chemical vapor deposition(MOCVD) method. Processing variables were the oxygen partial pressure and substrate temperature. The degree of texture and the surface roughness of the deposited NiO surface were analyzed by X-ray pole figure, atomic force microscopy (AFM), and scanning electron microscope (SEM). The (200) textured NiO layer was formed at 450 /spl sim/ 470 /spl deg/C and oxygen partial pressure of 1.67 Torr. Out-of-plane(/spl omega/-scan) and in-plane(/spl Phi/-scan) texture were 10.34/spl deg/ and 10.00/spl deg/, respectively. The surface roughness estimated by atomic force microscopy was in the range of 3.1 /spl sim/ 4.6 nm which was much smoother than that prepared by an oxidation method. We discuss the development of the (200) texture in the MOCVD-NiO films in terms of processing variables. |
| doi_str_mv | 10.1109/TASC.2003.811842 |
| format | Article |
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Processing variables were the oxygen partial pressure and substrate temperature. The degree of texture and the surface roughness of the deposited NiO surface were analyzed by X-ray pole figure, atomic force microscopy (AFM), and scanning electron microscope (SEM). The (200) textured NiO layer was formed at 450 /spl sim/ 470 /spl deg/C and oxygen partial pressure of 1.67 Torr. Out-of-plane(/spl omega/-scan) and in-plane(/spl Phi/-scan) texture were 10.34/spl deg/ and 10.00/spl deg/, respectively. The surface roughness estimated by atomic force microscopy was in the range of 3.1 /spl sim/ 4.6 nm which was much smoother than that prepared by an oxidation method. We discuss the development of the (200) texture in the MOCVD-NiO films in terms of processing variables.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2003.811842</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Atomic force microscopy ; Atomic layer deposition ; Buffer layers ; Conductors ; Electrical engineering. Electrical power engineering ; Exact sciences and technology ; Materials ; MOCVD ; Rough surfaces ; Scanning electron microscopy ; Surface roughness ; Surface texture ; Yttrium barium copper oxide</subject><ispartof>IEEE transactions on applied superconductivity, 2003-06, Vol.13 (2), p.2539-2542</ispartof><rights>2003 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c380t-333a4dd00597ff1ba8e3ff32d8ae9020fb70b04f3e8cf501e50a6a9f016a8af13</citedby><cites>FETCH-LOGICAL-c380t-333a4dd00597ff1ba8e3ff32d8ae9020fb70b04f3e8cf501e50a6a9f016a8af13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1212133$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,796,23929,23930,25139,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1212133$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15072226$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SUN, Jong-Won</creatorcontrib><creatorcontrib>HYUNG SEOP KIM</creatorcontrib><creatorcontrib>BONG KI JI</creatorcontrib><creatorcontrib>PARK, Hai-Woong</creatorcontrib><creatorcontrib>HONG, Gye-Won</creatorcontrib><creatorcontrib>JUNG, Choong-Hwan</creatorcontrib><creatorcontrib>PARK, Soon-Dong</creatorcontrib><creatorcontrib>JUN, Byung-Hyuk</creatorcontrib><creatorcontrib>KIM, Chan-Joong</creatorcontrib><title>Texture and surface analysis of NiO buffer deposited on biaxially textured Ni tapes by a MOCVD method</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>NiO buffer layers for YBCO coated conductors were deposited on textured Ni substrates by a metal-organic chemical vapor deposition(MOCVD) method. Processing variables were the oxygen partial pressure and substrate temperature. The degree of texture and the surface roughness of the deposited NiO surface were analyzed by X-ray pole figure, atomic force microscopy (AFM), and scanning electron microscope (SEM). The (200) textured NiO layer was formed at 450 /spl sim/ 470 /spl deg/C and oxygen partial pressure of 1.67 Torr. Out-of-plane(/spl omega/-scan) and in-plane(/spl Phi/-scan) texture were 10.34/spl deg/ and 10.00/spl deg/, respectively. The surface roughness estimated by atomic force microscopy was in the range of 3.1 /spl sim/ 4.6 nm which was much smoother than that prepared by an oxidation method. We discuss the development of the (200) texture in the MOCVD-NiO films in terms of processing variables.</description><subject>Applied sciences</subject><subject>Atomic force microscopy</subject><subject>Atomic layer deposition</subject><subject>Buffer layers</subject><subject>Conductors</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Exact sciences and technology</subject><subject>Materials</subject><subject>MOCVD</subject><subject>Rough surfaces</subject><subject>Scanning electron microscopy</subject><subject>Surface roughness</subject><subject>Surface texture</subject><subject>Yttrium barium copper oxide</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkc1LxDAQxYso-HkXvARBb10nSdOmR1k_Qd2Dq9cwbSeYpbtdkxZ2_3tbKix4kjnMwPzeO7wXReccJpxDfjO_fZ9OBICcaM51IvaiI66UjoXiar-_QfFYCyEPo-MQFgA80Yk6imhOm7bzxHBVsdB5i-VwY70NLrDGsjc3Y0VnLXlW0boJrqWKNStWONw4rOsta0eHqkdZi2sKrNgyZK-z6ecdW1L71VSn0YHFOtDZ7z6JPh7u59On-GX2-Dy9fYlLqaGNpZSYVBWAyjNreYGapLVSVBopBwG2yKCAxErSpVXASQGmmFvgKWq0XJ5E16Pv2jffHYXWLF0oqa5xRU0XjNA6kyrL_gGmuUrEAF7-ARdN5_t8gskFV5Bnad5DMEKlb0LwZM3auyX6reFghnbM0I4Z2jFjO73k6tcXQ4m19bgqXdjpFGRCiLTnLkbOEdHuLfrp0_oB9bGXYA</recordid><startdate>20030601</startdate><enddate>20030601</enddate><creator>SUN, Jong-Won</creator><creator>HYUNG SEOP KIM</creator><creator>BONG KI JI</creator><creator>PARK, Hai-Woong</creator><creator>HONG, Gye-Won</creator><creator>JUNG, Choong-Hwan</creator><creator>PARK, Soon-Dong</creator><creator>JUN, Byung-Hyuk</creator><creator>KIM, Chan-Joong</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Electrical power engineering</topic><topic>Exact sciences and technology</topic><topic>Materials</topic><topic>MOCVD</topic><topic>Rough surfaces</topic><topic>Scanning electron microscopy</topic><topic>Surface roughness</topic><topic>Surface texture</topic><topic>Yttrium barium copper oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SUN, Jong-Won</creatorcontrib><creatorcontrib>HYUNG SEOP KIM</creatorcontrib><creatorcontrib>BONG KI JI</creatorcontrib><creatorcontrib>PARK, Hai-Woong</creatorcontrib><creatorcontrib>HONG, Gye-Won</creatorcontrib><creatorcontrib>JUNG, Choong-Hwan</creatorcontrib><creatorcontrib>PARK, Soon-Dong</creatorcontrib><creatorcontrib>JUN, Byung-Hyuk</creatorcontrib><creatorcontrib>KIM, Chan-Joong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUN, Jong-Won</au><au>HYUNG SEOP KIM</au><au>BONG KI JI</au><au>PARK, Hai-Woong</au><au>HONG, Gye-Won</au><au>JUNG, Choong-Hwan</au><au>PARK, Soon-Dong</au><au>JUN, Byung-Hyuk</au><au>KIM, Chan-Joong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Texture and surface analysis of NiO buffer deposited on biaxially textured Ni tapes by a MOCVD method</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2003-06-01</date><risdate>2003</risdate><volume>13</volume><issue>2</issue><spage>2539</spage><epage>2542</epage><pages>2539-2542</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>NiO buffer layers for YBCO coated conductors were deposited on textured Ni substrates by a metal-organic chemical vapor deposition(MOCVD) method. Processing variables were the oxygen partial pressure and substrate temperature. The degree of texture and the surface roughness of the deposited NiO surface were analyzed by X-ray pole figure, atomic force microscopy (AFM), and scanning electron microscope (SEM). The (200) textured NiO layer was formed at 450 /spl sim/ 470 /spl deg/C and oxygen partial pressure of 1.67 Torr. Out-of-plane(/spl omega/-scan) and in-plane(/spl Phi/-scan) texture were 10.34/spl deg/ and 10.00/spl deg/, respectively. The surface roughness estimated by atomic force microscopy was in the range of 3.1 /spl sim/ 4.6 nm which was much smoother than that prepared by an oxidation method. We discuss the development of the (200) texture in the MOCVD-NiO films in terms of processing variables.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TASC.2003.811842</doi><tpages>4</tpages></addata></record> |
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| subjects | Applied sciences Atomic force microscopy Atomic layer deposition Buffer layers Conductors Electrical engineering. Electrical power engineering Exact sciences and technology Materials MOCVD Rough surfaces Scanning electron microscopy Surface roughness Surface texture Yttrium barium copper oxide |
| title | Texture and surface analysis of NiO buffer deposited on biaxially textured Ni tapes by a MOCVD method |
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