In situ sputtering growth and characterization of MgB2 films for microwave applications

The films were characterized by a variety of structural and electronic techniques including profilometry, XRD, EDS, and STM-AFM analyses, critical current, upper critical field and penetration depth measurements.

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Veröffentlicht in:IEEE transactions on applied superconductivity 2003-06, Vol.13 (2), p.3602-3605
Hauptverfasser: ANDREONE, Antonello, CASSINESE, Antonio, CHIARELLA, Fabio, DI CAPUA, Roberto, DI GENNARO, Emiliano, LAMURA, Gianrico, MAGLIONE, Maria Grazia, SALLUZZO, Marco, VAGLIO, Ruggero
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Sprache:eng
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Zusammenfassung:The films were characterized by a variety of structural and electronic techniques including profilometry, XRD, EDS, and STM-AFM analyses, critical current, upper critical field and penetration depth measurements.
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2003.812408