Selective MOCVD growth of ZnO nanotips

ZnO is a wide bandgap semiconductor with a direct bandgap of 3.32eV at room temperature. It is a candidate material for ultraviolet LED and laser. ZnO has an exciton binding energy of 60 meV, much higher than that of GaN. It is found to be significantly more radiation hard than Si, GaAs, and GaN, wh...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2003-03, Vol.2 (1), p.50-54
Hauptverfasser:	Muthukumar, S., Haifeng Sheng, Jian Zhong, Zheng Zhang, Emanetoglu, N.W., Yicheng Lu
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Field emission Gallium arsenide Gallium nitride Gallium nitrides Light emitting diodes Materials science Methods of deposition of films and coatings film growth and epitaxy MOCVD Nanocomposites Nanomaterials Nanoscale materials and structures: fabrication and characterization Nanostructure Optical materials Photonic band gap Physics Semiconductor materials Semiconductors Substrates Temperature Wide band gap semiconductors Wide bandgap semiconductors Zinc oxide
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