Modeling for the 2nd-bit effect of a nitride-based trapping storage flash EEPROM cell under two-bit operation

In this letter, we propose a macromodeling approach for the nitride-based trapping storage Flash EEPROM cell with intriguing 2nd-bit effect. Both unusual I/sub D/-V/sub D/ and I/sub D/-V/sub G/ characteristics of this 2-bit Flash cell can be accurately modeled by the macromodel. It also provides ins...

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Veröffentlicht in:	IEEE electron device letters 2004-02, Vol.25 (2), p.95-97
Hauptverfasser:	Chang, Y.-W., Lu, T.-C., Pan, S., Lu, C.-Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Degradation Dielectrics Electron traps EPROM Flash memory Nonvolatile memory Solids Transconductance Velocity measurement
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