A capacitor cross-coupled common-gate low-noise amplifier
The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET f/sub T/, which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degener...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. 2, Analog and digital signal processing Analog and digital signal processing, 2005-12, Vol.52 (12), p.875-879 |
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| container_title | IEEE transactions on circuits and systems. 2, Analog and digital signal processing |
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| creator | Zhuo, W. Li, X. Shekhar, S. Embabi, S.H.K. de Gyvez, J.P. Allstot, D.J. Sanchez-Sinencio, E. |
| description | The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET f/sub T/, which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degenerated common-source LNA (CSLNA). A capacitor cross-coupled g/sub m/-boosting scheme is described that improves the NF and retains the advantages of the CGLNA topology. The technique also enables a significant reduction in current consumption. A fully integrated capacitor cross-coupled CGLNA implemented in 180-nm CMOS validates the g/sub m/-boosting technique. It achieves a measured NF of 3.0 dB at 6.0 GHz and consumes only 3.6 mA from 1.8 V; the measured input-referred third-order intercept ( IIP3) value is 11.4 dBm. The capacitor cross-coupled g/sub m/-boosted CGLNA is attractive for low-power fully integrated applications in fine-line CMOS technologies. |
| doi_str_mv | 10.1109/TCSII.2005.853966 |
| format | Article |
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A capacitor cross-coupled g/sub m/-boosting scheme is described that improves the NF and retains the advantages of the CGLNA topology. The technique also enables a significant reduction in current consumption. A fully integrated capacitor cross-coupled CGLNA implemented in 180-nm CMOS validates the g/sub m/-boosting technique. It achieves a measured NF of 3.0 dB at 6.0 GHz and consumes only 3.6 mA from 1.8 V; the measured input-referred third-order intercept ( IIP3) value is 11.4 dBm. The capacitor cross-coupled g/sub m/-boosted CGLNA is attractive for low-power fully integrated applications in fine-line CMOS technologies.</description><identifier>ISSN: 1549-7747</identifier><identifier>ISSN: 1057-7130</identifier><identifier>EISSN: 1558-3791</identifier><identifier>DOI: 10.1109/TCSII.2005.853966</identifier><identifier>CODEN: ICSPE5</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitors ; CMOS technology ; Common-gate amplifier ; Frequency ; Impedance matching ; Linearity ; low-noise amplifier (LNA) ; Low-noise amplifiers ; MOSFET circuits ; Noise figure ; noise figure (NF) ; Noise measurement ; RF integrated circuits ; Stability</subject><ispartof>IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 2005-12, Vol.52 (12), p.875-879</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c432t-24cd2054649d4d448f8400a445d23ca7715e14584b58fde672575cbb31660d63</citedby><cites>FETCH-LOGICAL-c432t-24cd2054649d4d448f8400a445d23ca7715e14584b58fde672575cbb31660d63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1556810$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1556810$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhuo, W.</creatorcontrib><creatorcontrib>Li, X.</creatorcontrib><creatorcontrib>Shekhar, S.</creatorcontrib><creatorcontrib>Embabi, S.H.K.</creatorcontrib><creatorcontrib>de Gyvez, J.P.</creatorcontrib><creatorcontrib>Allstot, D.J.</creatorcontrib><creatorcontrib>Sanchez-Sinencio, E.</creatorcontrib><title>A capacitor cross-coupled common-gate low-noise amplifier</title><title>IEEE transactions on circuits and systems. 2, Analog and digital signal processing</title><addtitle>TCSII</addtitle><description>The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET f/sub T/, which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degenerated common-source LNA (CSLNA). A capacitor cross-coupled g/sub m/-boosting scheme is described that improves the NF and retains the advantages of the CGLNA topology. The technique also enables a significant reduction in current consumption. A fully integrated capacitor cross-coupled CGLNA implemented in 180-nm CMOS validates the g/sub m/-boosting technique. It achieves a measured NF of 3.0 dB at 6.0 GHz and consumes only 3.6 mA from 1.8 V; the measured input-referred third-order intercept ( IIP3) value is 11.4 dBm. The capacitor cross-coupled g/sub m/-boosted CGLNA is attractive for low-power fully integrated applications in fine-line CMOS technologies.</description><subject>Capacitors</subject><subject>CMOS technology</subject><subject>Common-gate amplifier</subject><subject>Frequency</subject><subject>Impedance matching</subject><subject>Linearity</subject><subject>low-noise amplifier (LNA)</subject><subject>Low-noise amplifiers</subject><subject>MOSFET circuits</subject><subject>Noise figure</subject><subject>noise figure (NF)</subject><subject>Noise measurement</subject><subject>RF integrated circuits</subject><subject>Stability</subject><issn>1549-7747</issn><issn>1057-7130</issn><issn>1558-3791</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1LxDAQhoMouK7-APFSPHjLmo9J0hyXxY_Cggf3HrJpKl3apiYt4r93uxUETzOH532ZeRC6pWRFKdGPu817UawYIWKVC66lPEMLKkSOudL0fNpBY6VAXaKrlA6EME04WyC9zpztrauHEDMXQ0rYhbFvfJm50Lahwx928FkTvnAX6uQz2_ZNXdU-XqOLyjbJ3_zOJdo9P-02r3j79lJs1lvsgLMBM3AlIwIk6BJKgLzKgRALIErGnVWKCk9B5LAXeVV6qZhQwu33nEpJSsmX6GGu7WP4HH0aTFsn55vGdj6MyTClteBcH8H7f-AhjLE7nmY0I1IrBhNEZ-j0avSV6WPd2vhtKDGTSHMSaSaRZhZ5zNzNmdp7_8cLIXNK-A8r120o</recordid><startdate>20051201</startdate><enddate>20051201</enddate><creator>Zhuo, W.</creator><creator>Li, X.</creator><creator>Shekhar, S.</creator><creator>Embabi, S.H.K.</creator><creator>de Gyvez, J.P.</creator><creator>Allstot, D.J.</creator><creator>Sanchez-Sinencio, E.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20051201</creationdate><title>A capacitor cross-coupled common-gate low-noise amplifier</title><author>Zhuo, W. ; Li, X. ; Shekhar, S. ; Embabi, S.H.K. ; de Gyvez, J.P. ; Allstot, D.J. ; Sanchez-Sinencio, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c432t-24cd2054649d4d448f8400a445d23ca7715e14584b58fde672575cbb31660d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Capacitors</topic><topic>CMOS technology</topic><topic>Common-gate amplifier</topic><topic>Frequency</topic><topic>Impedance matching</topic><topic>Linearity</topic><topic>low-noise amplifier (LNA)</topic><topic>Low-noise amplifiers</topic><topic>MOSFET circuits</topic><topic>Noise figure</topic><topic>noise figure (NF)</topic><topic>Noise measurement</topic><topic>RF integrated circuits</topic><topic>Stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhuo, W.</creatorcontrib><creatorcontrib>Li, X.</creatorcontrib><creatorcontrib>Shekhar, S.</creatorcontrib><creatorcontrib>Embabi, S.H.K.</creatorcontrib><creatorcontrib>de Gyvez, J.P.</creatorcontrib><creatorcontrib>Allstot, D.J.</creatorcontrib><creatorcontrib>Sanchez-Sinencio, E.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on circuits and systems. 2, Analog and digital signal processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhuo, W.</au><au>Li, X.</au><au>Shekhar, S.</au><au>Embabi, S.H.K.</au><au>de Gyvez, J.P.</au><au>Allstot, D.J.</au><au>Sanchez-Sinencio, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A capacitor cross-coupled common-gate low-noise amplifier</atitle><jtitle>IEEE transactions on circuits and systems. 2, Analog and digital signal processing</jtitle><stitle>TCSII</stitle><date>2005-12-01</date><risdate>2005</risdate><volume>52</volume><issue>12</issue><spage>875</spage><epage>879</epage><pages>875-879</pages><issn>1549-7747</issn><issn>1057-7130</issn><eissn>1558-3791</eissn><coden>ICSPE5</coden><abstract>The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET f/sub T/, which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degenerated common-source LNA (CSLNA). A capacitor cross-coupled g/sub m/-boosting scheme is described that improves the NF and retains the advantages of the CGLNA topology. The technique also enables a significant reduction in current consumption. A fully integrated capacitor cross-coupled CGLNA implemented in 180-nm CMOS validates the g/sub m/-boosting technique. It achieves a measured NF of 3.0 dB at 6.0 GHz and consumes only 3.6 mA from 1.8 V; the measured input-referred third-order intercept ( IIP3) value is 11.4 dBm. The capacitor cross-coupled g/sub m/-boosted CGLNA is attractive for low-power fully integrated applications in fine-line CMOS technologies.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSII.2005.853966</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 2005-12, Vol.52 (12), p.875-879 |
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| subjects | Capacitors CMOS technology Common-gate amplifier Frequency Impedance matching Linearity low-noise amplifier (LNA) Low-noise amplifiers MOSFET circuits Noise figure noise figure (NF) Noise measurement RF integrated circuits Stability |
| title | A capacitor cross-coupled common-gate low-noise amplifier |
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