High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C

Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × 10 19  cm −3 to 8 × 10 20  cm −3 . These samples have been annealed by microwave and conventional inductively heated systems in the temperature...

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