Performance Evaluation of 10-kV SiC Trench Clustered IGBT

The performance of a 10-kV p-channel trench clustered insulated-gate bipolar transistor (IGBT) in silicon carbide evaluated through extensive 2-D numerical simulations is reported here for the first time. Comparison with an equivalent trench IGBT reveals a reduction in the following: 1) on -state vo...

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Veröffentlicht in:	IEEE electron device letters 2011-09, Vol.32 (9), p.1272-1274
Hauptverfasser:	Menon, K. G., Nakajima, A., Ngwendson, L., Narayanan, E. M. Sankara
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodes Applied sciences Clustered Insulated-Gate Bipolar Transistor IGBT CIGBT Clustering Computer simulation Electric potential Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Equivalence Exact sciences and technology IGBTs Insulated gate bipolar transistors Logic gates Other multijunction devices. Power transistors. Thyristors Performance evaluation Power electronics, power supplies power semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon carbide silicon carbide (SiC) Trenches Voltage wide bandgap
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Zusammenfassung:	The performance of a 10-kV p-channel trench clustered insulated-gate bipolar transistor (IGBT) in silicon carbide evaluated through extensive 2-D numerical simulations is reported here for the first time. Comparison with an equivalent trench IGBT reveals a reduction in the following: 1) on -state voltage by more than 30%; 2) differential specific on-resistance by 20%; and 3) total ( on-state and turnoff) losses by more than 25%.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2011.2160144