Impact of Process Variations on SRAM Single Event Upsets

Process variations affect the single event (SE) hardness of SRAM cells. Monte-Carlo simulations show this effect and can be used to quantify the significance of process parameter shifts on SRAM SE upset probabilities.

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on nuclear science 2011-06, Vol.58 (3), p.834-839
Hauptverfasser:	Kauppila, A V, Bhuva, B L, Kauppila, J S, Massengill, L W, Holman, W T
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS CMOS integrated circuits Computer simulation critical charge Hardness Monte Carlo methods MOSFETs Process parameters Random access memory Simulation single event transients Single event upset Single event upsets SRAMs Static random access memory Threshold voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Process variations affect the single event (SE) hardness of SRAM cells. Monte-Carlo simulations show this effect and can be used to quantify the significance of process parameter shifts on SRAM SE upset probabilities.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2010.2098419