A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module

In this paper, the design and fabrication of a miniaturized 4-W power amplifier for the WiMAX frequency band (2.3-2.7 GHz) is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint Semiconducotr Inc., Hillsboro, OR. The optimum input and output impedances of th...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2011-12, Vol.59 (12), p.3184-3194
Hauptverfasser:	JEONG, Hae-Chang, OH, Hyun-Seok, YEOM, Kyung-Whan
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Circuit properties Class-F power amplifier Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitride Gallium nitrides gallium-nitride (GaN) HEMT Harmonic analysis Harmonics HEMTs High electron mobility transistors Integrated circuits Magnetic devices Matching matching network Networks Power amplifiers Power generation Semiconductor device measurement Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tuning WiMAX
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