A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module
In this paper, the design and fabrication of a miniaturized 4-W power amplifier for the WiMAX frequency band (2.3-2.7 GHz) is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint Semiconducotr Inc., Hillsboro, OR. The optimum input and output impedances of th...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2011-12, Vol.59 (12), p.3184-3194 |
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| creator | JEONG, Hae-Chang OH, Hyun-Seok YEOM, Kyung-Whan |
| description | In this paper, the design and fabrication of a miniaturized 4-W power amplifier for the WiMAX frequency band (2.3-2.7 GHz) is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint Semiconducotr Inc., Hillsboro, OR. The optimum input and output impedances of the GaN HEMT at fundamental frequency are extracted using a custom designed tuning jig. A novel output matching network for class-F operation is proposed and designed using the measured impedances. For integration in a small package, the input and output matching networks are implemented using spiral inductors and interdigital capacitors, and their dimensions were determined using electromagnetic simulation. The fabricated power amplifier is 4.4 × 4.4 mm 2 and has an efficiency above 50% and harmonic suppression above 40 dBc for second and third harmonics at an output power of 36 dBm. |
| doi_str_mv | 10.1109/TMTT.2011.2169422 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_914285952</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6061920</ieee_id><sourcerecordid>1671394447</sourcerecordid><originalsourceid>FETCH-LOGICAL-c421t-1921edb97b2b31211abac77d48ef6b31bff434752f94d03c744025c9d52e7c633</originalsourceid><addsrcrecordid>eNpdkEFLwzAUx4MoOKcfQLwEQfDSmZcmTXOcY1NhVQ-VeQtpmkKka2eyIvrpzdjw4OXlveT3f4QfQpdAJgBE3pVFWU4oAZhQyCSj9AiNgHORyEyQYzQiBPJEspycorMQPuLIOMlHaD7Fheuc3g7e_dgar1wxfcf3uqsxS1Z41uoQkgV-0M_4cV6U-LX_sh5P15vWNS52RV8PrT1HJ41ug704nGP0tpiXs8dk-fLwNJsuE8MobBOQFGxdSVHRKgUKoCtthKhZbpss3lRNw1ImOG0kq0lqBGOEciNrTq0wWZqO0e1-78b3n4MNW7V2wdi21Z3th6AgE5BKxpiI6PU_9KMffBd_pyQwmnPJaYRgDxnfh-BtozberbX_VkDUzqvaeVU7r-rgNWZuDot1MLptvO6MC39BylORiVjH6GrPOWvt33NGsmiBpL8wc3yR</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>914285952</pqid></control><display><type>article</type><title>A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module</title><source>IEEE Xplore</source><creator>JEONG, Hae-Chang ; OH, Hyun-Seok ; YEOM, Kyung-Whan</creator><creatorcontrib>JEONG, Hae-Chang ; OH, Hyun-Seok ; YEOM, Kyung-Whan</creatorcontrib><description>In this paper, the design and fabrication of a miniaturized 4-W power amplifier for the WiMAX frequency band (2.3-2.7 GHz) is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint Semiconducotr Inc., Hillsboro, OR. The optimum input and output impedances of the GaN HEMT at fundamental frequency are extracted using a custom designed tuning jig. A novel output matching network for class-F operation is proposed and designed using the measured impedances. For integration in a small package, the input and output matching networks are implemented using spiral inductors and interdigital capacitors, and their dimensions were determined using electromagnetic simulation. The fabricated power amplifier is 4.4 × 4.4 mm 2 and has an efficiency above 50% and harmonic suppression above 40 dBc for second and third harmonics at an output power of 36 dBm.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2011.2169422</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Circuit properties ; Class-F power amplifier ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Gallium nitride ; Gallium nitrides ; gallium-nitride (GaN) HEMT ; Harmonic analysis ; Harmonics ; HEMTs ; High electron mobility transistors ; Integrated circuits ; Magnetic devices ; Matching ; matching network ; Networks ; Power amplifiers ; Power generation ; Semiconductor device measurement ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Tuning ; WiMAX</subject><ispartof>IEEE transactions on microwave theory and techniques, 2011-12, Vol.59 (12), p.3184-3194</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c421t-1921edb97b2b31211abac77d48ef6b31bff434752f94d03c744025c9d52e7c633</citedby><cites>FETCH-LOGICAL-c421t-1921edb97b2b31211abac77d48ef6b31bff434752f94d03c744025c9d52e7c633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6061920$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6061920$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25376725$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JEONG, Hae-Chang</creatorcontrib><creatorcontrib>OH, Hyun-Seok</creatorcontrib><creatorcontrib>YEOM, Kyung-Whan</creatorcontrib><title>A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>In this paper, the design and fabrication of a miniaturized 4-W power amplifier for the WiMAX frequency band (2.3-2.7 GHz) is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint Semiconducotr Inc., Hillsboro, OR. The optimum input and output impedances of the GaN HEMT at fundamental frequency are extracted using a custom designed tuning jig. A novel output matching network for class-F operation is proposed and designed using the measured impedances. For integration in a small package, the input and output matching networks are implemented using spiral inductors and interdigital capacitors, and their dimensions were determined using electromagnetic simulation. The fabricated power amplifier is 4.4 × 4.4 mm 2 and has an efficiency above 50% and harmonic suppression above 40 dBc for second and third harmonics at an output power of 36 dBm.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Class-F power amplifier</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>gallium-nitride (GaN) HEMT</subject><subject>Harmonic analysis</subject><subject>Harmonics</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Integrated circuits</subject><subject>Magnetic devices</subject><subject>Matching</subject><subject>matching network</subject><subject>Networks</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Semiconductor device measurement</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Tuning</subject><subject>WiMAX</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEFLwzAUx4MoOKcfQLwEQfDSmZcmTXOcY1NhVQ-VeQtpmkKka2eyIvrpzdjw4OXlveT3f4QfQpdAJgBE3pVFWU4oAZhQyCSj9AiNgHORyEyQYzQiBPJEspycorMQPuLIOMlHaD7Fheuc3g7e_dgar1wxfcf3uqsxS1Z41uoQkgV-0M_4cV6U-LX_sh5P15vWNS52RV8PrT1HJ41ug704nGP0tpiXs8dk-fLwNJsuE8MobBOQFGxdSVHRKgUKoCtthKhZbpss3lRNw1ImOG0kq0lqBGOEciNrTq0wWZqO0e1-78b3n4MNW7V2wdi21Z3th6AgE5BKxpiI6PU_9KMffBd_pyQwmnPJaYRgDxnfh-BtozberbX_VkDUzqvaeVU7r-rgNWZuDot1MLptvO6MC39BylORiVjH6GrPOWvt33NGsmiBpL8wc3yR</recordid><startdate>20111201</startdate><enddate>20111201</enddate><creator>JEONG, Hae-Chang</creator><creator>OH, Hyun-Seok</creator><creator>YEOM, Kyung-Whan</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20111201</creationdate><title>A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module</title><author>JEONG, Hae-Chang ; OH, Hyun-Seok ; YEOM, Kyung-Whan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c421t-1921edb97b2b31211abac77d48ef6b31bff434752f94d03c744025c9d52e7c633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Class-F power amplifier</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>gallium-nitride (GaN) HEMT</topic><topic>Harmonic analysis</topic><topic>Harmonics</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Integrated circuits</topic><topic>Magnetic devices</topic><topic>Matching</topic><topic>matching network</topic><topic>Networks</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Semiconductor device measurement</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Tuning</topic><topic>WiMAX</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JEONG, Hae-Chang</creatorcontrib><creatorcontrib>OH, Hyun-Seok</creatorcontrib><creatorcontrib>YEOM, Kyung-Whan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JEONG, Hae-Chang</au><au>OH, Hyun-Seok</au><au>YEOM, Kyung-Whan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2011-12-01</date><risdate>2011</risdate><volume>59</volume><issue>12</issue><spage>3184</spage><epage>3194</epage><pages>3184-3194</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>In this paper, the design and fabrication of a miniaturized 4-W power amplifier for the WiMAX frequency band (2.3-2.7 GHz) is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint Semiconducotr Inc., Hillsboro, OR. The optimum input and output impedances of the GaN HEMT at fundamental frequency are extracted using a custom designed tuning jig. A novel output matching network for class-F operation is proposed and designed using the measured impedances. For integration in a small package, the input and output matching networks are implemented using spiral inductors and interdigital capacitors, and their dimensions were determined using electromagnetic simulation. The fabricated power amplifier is 4.4 × 4.4 mm 2 and has an efficiency above 50% and harmonic suppression above 40 dBc for second and third harmonics at an output power of 36 dBm.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2011.2169422</doi><tpages>11</tpages></addata></record> |
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| subjects | Amplifiers Applied sciences Circuit properties Class-F power amplifier Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitride Gallium nitrides gallium-nitride (GaN) HEMT Harmonic analysis Harmonics HEMTs High electron mobility transistors Integrated circuits Magnetic devices Matching matching network Networks Power amplifiers Power generation Semiconductor device measurement Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tuning WiMAX |
| title | A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T19%3A26%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Miniaturized%20WiMAX%20Band%204-W%20Class-F%20GaN%20HEMT%20Power%20Amplifier%20Module&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=JEONG,%20Hae-Chang&rft.date=2011-12-01&rft.volume=59&rft.issue=12&rft.spage=3184&rft.epage=3194&rft.pages=3184-3194&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2011.2169422&rft_dat=%3Cproquest_RIE%3E1671394447%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=914285952&rft_id=info:pmid/&rft_ieee_id=6061920&rfr_iscdi=true |