Resistive Switching in [Formula Omitted] Probed by a Metal-Insulator-Semiconductor Bipolar Transistor

Resistive Switching in [Formula Omitted] Probed by a Metal-Insulator-Semiconductor Bipolar Transistor

Resistive switching in thin [Formula Omitted] films is studied using a metal-insulator-semiconductor bipolar transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction...

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Veröffentlicht in:IEEE electron device letters 2012-01, Vol.33 (1), p.11
Hauptverfasser: Yalon, E, Gavrilov, A, Cohen, S, Mistele, D, Meyler, B, Salzman, J, Ritter, D
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container_issue 1
container_start_page 11
container_title IEEE electron device letters
container_volume 33
creator Yalon, E
Gavrilov, A
Cohen, S
Mistele, D
Meyler, B
Salzman, J
Ritter, D
description Resistive switching in thin [Formula Omitted] films is studied using a metal-insulator-semiconductor bipolar transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.
doi_str_mv 10.1109/LED.2011.2171317
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title Resistive Switching in [Formula Omitted] Probed by a Metal-Insulator-Semiconductor Bipolar Transistor
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