A Light-Impact Model for p-Type and n-Type Poly-Si TFTs

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (I d ) over the dark current (I dark ) is calculated. The new model has been also impl...

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Veröffentlicht in:	Journal of display technology 2009-07, Vol.5 (7), p.265-272
Hauptverfasser:	Papadopoulos, N.P., Hatzopoulos, A.A., Papakostas, D.K., Picos, R., Dimitriadis, C.A., Siskos, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit simulation Circuits Computer simulation Dark current Display devices Electric potential Electron traps Grain boundaries I - V modeling impact influence Laboratories Length measurement Light Lighting Mathematical model n-type optical p-type polysilicon thin-film transistors (poly-Si TFTs) Semiconductor devices Semiconductor process modeling SPICE Thin film transistors Voltage
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