A Light-Impact Model for p-Type and n-Type Poly-Si TFTs
This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (I d ) over the dark current (I dark ) is calculated. The new model has been also impl...
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| Veröffentlicht in: | Journal of display technology 2009-07, Vol.5 (7), p.265-272 |
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| container_title | Journal of display technology |
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| creator | Papadopoulos, N.P. Hatzopoulos, A.A. Papakostas, D.K. Picos, R. Dimitriadis, C.A. Siskos, S. |
| description | This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (I d ) over the dark current (I dark ) is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the V ds and V gs voltages and of light intensities. |
| doi_str_mv | 10.1109/JDT.2009.2015898 |
| format | Article |
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| source | IEEE Electronic Library (IEL) |
| subjects | Circuit simulation Circuits Computer simulation Dark current Display devices Electric potential Electron traps Grain boundaries I - V modeling impact influence Laboratories Length measurement Light Lighting Mathematical model n-type optical p-type polysilicon thin-film transistors (poly-Si TFTs) Semiconductor devices Semiconductor process modeling SPICE Thin film transistors Voltage |
| title | A Light-Impact Model for p-Type and n-Type Poly-Si TFTs |
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