Origin of the Asymmetry in the Magnitude of the Statistical Variability of n- and p-Channel Poly-Si Gate Bulk MOSFETs

We present measurements for the standard deviation of the threshold voltage in n- and p-channel MOSFETs from the 45-nm low-power platform of STMicroelectronics. The measurements are compared with 3-D statistical simulations carried out with the Glasgow ldquoatomisticrdquo device simulator, consideri...

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Veröffentlicht in:	IEEE electron device letters 2008-08, Vol.29 (8), p.913-915
Hauptverfasser:	Asenov, A., Cathignol, A., Cheng, B., McKenna, K.P., Brown, A.R., Shluger, A.L., Chanemougame, D., Rochereau, K., Ghibaudo, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Asymmetry Characterization CMOS Current measurement Design. Technologies. Operation analysis. Testing Devices Electrodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Extraterrestrial measurements first-principle simulation Gates Grain boundaries Integrated circuits Measurement standards MOSFET MOSFETs Numerical simulation Rough surfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Standard deviation statistical variability Surface roughness Threshold voltage Transistors
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