Quantum Dash Intermixing

We investigate the intermixing effect in InAs/InAlGaAs quantum-dash-in-well structures grown on InP substrate. Both impurity-free vacancy disordering (IFVD) via dielectric cap annealing, and impurity-induced disordering (IID) using nitrogen ion-implantation techniques have been employed to spatially...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2008-07, Vol.14 (4), p.1239-1249
Hauptverfasser:	Susanto Djie, H., Yang Wang, Yun-Hsiang Ding, Dong-Ning Wang, Hwang, J., Xiao-Ming Fang, Ying Wu, Fastenau, J.M., Liu, A., Dang, G.T., Chang, W.H., Ooi, B.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Control systems Dielectric substrates Dielectrics Disordering Homogeneity Indium phosphide Indium phosphides Integrity interdiffusion ion-implantation Laser transitions Lasers Nitrogen Optical materials Photonic band gap photonic integrated circuits (PICs) Quantum dots Quantum electronics Quantum well lasers quantum-dash (Qdash) quantum-dot intermixing quantum-well (QW) intermixing Wavelengths
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