1/f Noise in Carbon Nanotube Devices-On the Impact of Contacts and Device Geometry

We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude A and the sample resistance R. By contacting semiconducting tubes with different metal electrodes we a...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2007-05, Vol.6 (3), p.368-373
Hauptverfasser:	Appenzeller, J., Yu-Ming Lin, Knoch, J., Zhihong Chen, Avouris, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	1/f noise Applied sciences Carbon nanotube Carbon nanotubes Contact resistance Cross-disciplinary physics: materials science rheology Electrodes Electronics Exact sciences and technology field-effect transistor Geometry Logic Materials science Molecular electronics, nanoelectronics Nanocomposites Nanomaterials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanotubes Noise Noise level Noise reduction Physics Semiconductivity Semiconductor device noise Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal to noise ratio Transistors Tubes
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