Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices
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| Veröffentlicht in: | IEEE electron device letters 2007, Vol.28 (1), p.14-16 |
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| container_end_page | 16 |
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| container_issue | 1 |
| container_start_page | 14 |
| container_title | IEEE electron device letters |
| container_volume | 28 |
| creator | ZHENG WANG GRIFFIN, Peter B MCVITTIE, Jim WONG, Simon MCINTYRE, Paul C NISHI, Yoshio |
| description | |
| doi_str_mv | 10.1109/LED.2006.887640 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2007, Vol.28 (1), p.14-16 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_912192768 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information Switching, multiplexing, switched capacity circuits |
| title | Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices |
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