$Hot-Carrier Effects in Strained n-Channel Transistor With Silicon-Carbon (\hbox\hbox) Source/Drain Stressors and Its Orientation Dependence$

Hot-Carrier Effects in Strained n-Channel Transistor With Silicon-Carbon (\hbox\hbox) Source/Drain Stressors and Its Orientation Dependence

We report the hot-carrier effects in a novel strained n-channel transistor (n-FET) featuring silicon-carbon source and drain (Si 1-y C y S/D) stressors, and its dependence on channel orientations for the first time. Due to strain-induced bandgap reduction, Si 1-y C y S/D n-FETs show enhanced impact...

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Veröffentlicht in:	IEEE electron device letters 2007-11, Vol.28 (11), p.996-999
Hauptverfasser:	Kah-Wee Ang, Chunlei Wan, Balasubramanian, N., Samudra, G.S., Yee-Chia Yeo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitive sensors Channel orientation Degradation Electronics Exact sciences and technology Fabrication Hot carrier effects Hot carriers Impact ionization MOSFETs Photonic band gap Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices silicon-carbon (\hbox{Si}_{1 - y}\hbox{C}_{y}) strain Strain control Threshold voltage Transistors
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