Experimental Study of Data Retention in Nitride Memories by Temperature and Field Acceleration
We present a detailed investigation of data retention in nitride memories by means of temperature- and field-accelerated experiments. Using cell array stress test (CAST) structures, we show that a very different retention time is extracted from high-temperature and field extrapolations, revealing a...
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| Veröffentlicht in: | IEEE electron device letters 2007-07, Vol.28 (7), p.628-630 |
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| container_end_page | 630 |
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| container_title | IEEE electron device letters |
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| creator | Compagnoni, C.M. Spinelli, A.S. Lacaita, A.L. |
| description | We present a detailed investigation of data retention in nitride memories by means of temperature- and field-accelerated experiments. Using cell array stress test (CAST) structures, we show that a very different retention time is extracted from high-temperature and field extrapolations, revealing a change in the dominant charge-loss mechanism when the temperature is reduced to the room value. Finally, the dependence of data retention on electrical stress is studied on the arrays, showing that only a small reduction of the extrapolated retention time appears when increasing the stress dose, with no anomalous cell behaviors. |
| doi_str_mv | 10.1109/LED.2007.898487 |
| format | Article |
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Using cell array stress test (CAST) structures, we show that a very different retention time is extracted from high-temperature and field extrapolations, revealing a change in the dominant charge-loss mechanism when the temperature is reduced to the room value. Finally, the dependence of data retention on electrical stress is studied on the arrays, showing that only a small reduction of the extrapolated retention time appears when increasing the stress dose, with no anomalous cell behaviors.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2007.898487</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acceleration ; Applied sciences ; Arrays ; Data mining ; Data retention ; Design. Technologies. Operation analysis. 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Using cell array stress test (CAST) structures, we show that a very different retention time is extracted from high-temperature and field extrapolations, revealing a change in the dominant charge-loss mechanism when the temperature is reduced to the room value. Finally, the dependence of data retention on electrical stress is studied on the arrays, showing that only a small reduction of the extrapolated retention time appears when increasing the stress dose, with no anomalous cell behaviors.</description><subject>Acceleration</subject><subject>Applied sciences</subject><subject>Arrays</subject><subject>Data mining</subject><subject>Data retention</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Extrapolation</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Leakage current</subject><subject>nitride memories</subject><subject>Nitrides</subject><subject>nonvolatile memories</subject><subject>Nonvolatile memory</subject><subject>Reduction</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Testing</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Extrapolation</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Leakage current</topic><topic>nitride memories</topic><topic>Nitrides</topic><topic>nonvolatile memories</topic><topic>Nonvolatile memory</topic><topic>Reduction</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Senior members</topic><topic>Stress</topic><topic>stress-induced leakage current (SILC)</topic><topic>Stresses</topic><topic>Temperature</topic><topic>Testing</topic><topic>Testing, measurement, noise and reliability</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Compagnoni, C.M.</creatorcontrib><creatorcontrib>Spinelli, A.S.</creatorcontrib><creatorcontrib>Lacaita, A.L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Compagnoni, C.M.</au><au>Spinelli, A.S.</au><au>Lacaita, A.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental Study of Data Retention in Nitride Memories by Temperature and Field Acceleration</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2007-07-01</date><risdate>2007</risdate><volume>28</volume><issue>7</issue><spage>628</spage><epage>630</epage><pages>628-630</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We present a detailed investigation of data retention in nitride memories by means of temperature- and field-accelerated experiments. Using cell array stress test (CAST) structures, we show that a very different retention time is extracted from high-temperature and field extrapolations, revealing a change in the dominant charge-loss mechanism when the temperature is reduced to the room value. Finally, the dependence of data retention on electrical stress is studied on the arrays, showing that only a small reduction of the extrapolated retention time appears when increasing the stress dose, with no anomalous cell behaviors.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2007.898487</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2007-07, Vol.28 (7), p.628-630 |
| issn | 0741-3106 1558-0563 |
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| subjects | Acceleration Applied sciences Arrays Data mining Data retention Design. Technologies. Operation analysis. Testing Devices Electronics Exact sciences and technology Extrapolation Integrated circuits Integrated circuits by function (including memories and processors) Leakage current nitride memories Nitrides nonvolatile memories Nonvolatile memory Reduction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Senior members Stress stress-induced leakage current (SILC) Stresses Temperature Testing Testing, measurement, noise and reliability Tunneling |
| title | Experimental Study of Data Retention in Nitride Memories by Temperature and Field Acceleration |
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