Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

For the first time, the random telegraph signal (RTS) and its corresponding flicker noise (1/f) were investigated in gate-all-around p-type Si-FinFETs. For a device with gate width of ~ 100 nm (fin height) and length of ~ 200 nm, the typical RTS capture/emission time constants were ~ 0.1-1 ms. Very...

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Veröffentlicht in:	IEEE electron device letters 2006-09, Vol.27 (9), p.765-768
Hauptverfasser:	Lim, Y.F., Xiong, Y.Z., Singh, N., Yang, R., Jiang, Y., Chan, D.S.H., Loh, W.Y., Bera, L.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Format:	Artikel
Sprache:	eng
Schlagworte:	1f noise Amplitudes Applied sciences Controllability Devices Electronics Electrostatics Emission Exact sciences and technology FinFET FinFETs Flicker gate-all-around (GAA) Gates MOSFETs Noise random telegraph signals (RTS) Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Senior members Silicon Telegraphy Time constant Transistors
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