Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such a...

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Veröffentlicht in:	IEEE electron device letters 2006-04, Vol.27 (4), p.262-264
Hauptverfasser:	TU, Chun-Hao, CHANG, Ting-Chang, LIU, Po-Tsun, YANG, Che-Yu, LIU, Hsin-Chou, CHEN, Wei-Ren, WU, Yung-Chun, CHANG, Chun-Yen
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Crystallization Density Deposition Displays Electric variables Electronics Exact sciences and technology Excimer lasers Fluorine Fluorine ion implantation Hydrogen Ion implantation Manufacturing Microelectronic fabrication (materials and surfaces technology) Oxides Passivation polycrystalline silicon thin-film transistors (poly-Si TFTs) Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Thin film transistors Threshold voltage Transistors
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