Surface leakage currents in SiNx passivated AlGaN/GaN HFETs

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Veröffentlicht in:	IEEE electron device letters 2006, Vol.27 (1), p.1-3
Hauptverfasser:	TAN, W. S, UREN, M. J, HOUSTON, P. A, GREEN, R. T, BALMER, R. S, MARTIN, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing, measurement, noise and reliability Transistors
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subjects	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing, measurement, noise and reliability Transistors
title	Surface leakage currents in SiNx passivated AlGaN/GaN HFETs
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